SMG2361P_15 SECOS | Alldatasheet
Document overview
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Technical content
-3.4A , -60V , R DS(ON) 210 mΩΩ ΩΩ P-Channel Enhancement MOSFET 22-Aug-2013 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SC -59 Top View A L C B D G H JF K E 1 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low R DS(on) and to ensure minimal power loss and heat dissipation.
FEATURES
/circle6 Low R DS(on) provides higher efficiency and extends battery life. /circle6 Low thermal impedance copper leadframe SC-59 saves board space. /circle6 Fast switching speed. /circle6 High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
(T A=25 °C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V TA=25° C -3.4 Continuous Drain Current 1 TA=70° C ID -2.6 A Pulsed Drain Current 2 IDM -20 A Continuous Source Current (Diode Conduction) 1 I S -1.6 A TA=25° C 1.3 Power Dissipation 1 TA=70° C PD 0.8 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Resistance Data t ≦ 10 sec 100 Maximum Junction to Ambient 1 Steady-State R θJA 166 ° C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50
-3.4A , -60V , R DS(ON) 210 mΩΩ ΩΩ P-Channel Enhancement MOSFET 22-Aug-2013 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T A=25° C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Condition Static Gate-Threshold Voltage V GS(th) -1 - - V V DS =V GS , I D = -250 µA Gate-Body Leakage I GSS - - ±100 nA V DS =0, VGS = ±20V - - -1 VDS = -48V, VGS =0 Zero Gate Voltage Drain Current I DSS - - -10 µA VDS = -48V, VGS =0, T J=55° C On-State Drain Current 1 I D(ON) -8 - - A V DS = -5V, VGS = -10V Drain-Source On-Resistance 1 R DS(ON) - - 250 m Ω VGS = -4.5V, I D = -2.2A Forward Transconductance 1 g FS - 10 - S V DS = -15V, ,ID = -2.7A Diode Forward Voltage V SD - -0.83 - V I S= -0.8A, VGS =0 Dynamic 2 Total Gate Charge Q g - 5 - Gate-Source Charge Q gs - 2.2 - Gate-Drain Charge Q gd - 2.3 - nC ID = -2.7A VDS = -30V VGS = -4.5V Turn-On Delay Time Td (ON) - 7 - Rise Time Tr - 5 - Turn-Off Delay Time Td (OFF) - 23 - Fall Time Tf - 6 - nS ID = -2.7A, VDS = -30V, VGEN = -10V, R GEN =6Ω R L=11.2 Ω Input Capacitance C iss - 371 - Output Capacitance C oss - 31 - Reverse Transfer Capacitance C rss - 26 - pF VDS = -15V VGS =0 f=1MHz Notes: 1. Pulse test ：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing.
-3.4A , -60V , R DS(ON) 210 mΩΩ ΩΩ P-Channel Enhancement MOSFET 22-Aug-2013 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE
-3.4A , -60V , R DS(ON) 210 mΩΩ ΩΩ P-Channel Enhancement MOSFET 22-Aug-2013 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE