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-1.7A , -60V , RDS(ON) 381 m P-Channel Enhancement MOSFET 08-Nov-2012 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SC-59 Top View A L C B D G H JF K E 1 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.

FEATURES

 Low R DS(on) provides higher efficiency and extends battery life.  Fast Switch.  Low Gate Charge.  Miniature SC-59 Surface Mount Package Saves Board Space. APPLICATION Voltage control small signal switch, power management in portable and battery-powered products such as computer portable electronics and other battery power application.

PACKAGE INFORMATION

SC-59 3K 7’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage V GS ±20 V TA=25°C -1.7 Continuous Drain Current 1 TA=70°C ID -1.4 A Pulsed Drain Current 2 I DM ±15 A Continuous Source Current (Diode Conduction) 1 I S -1.7 A TA=25°C 1.3 Power Dissipation 1 TA=70°C PD 0.8 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Data t≦5 sec 100 Maximum Junction to Ambient 1 Steady-State RθJA 166 °C/W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50

-1.7A , -60V , RDS(ON) 381 m P-Channel Enhancement MOSFET 08-Nov-2012 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static - - -1 VDS = -48V, VGS=0 Zero Gate Voltage Drain Current I DSS - - -10 μA VDS = -48V, VGS=0, TJ=55°C Gate-Body Leakage I GSS - - ±100 nA V DS =0, VGS= ±20V Gate-Threshold Voltage V GS(th) -1 -2.1 -3.5 V V DS =VGS, ID = -250μA On-State Drain Current 1 I D(ON) -8 - - A V DS = -5V, VGS= -10V - 300 381 VGS= -10V, ID = -1.6A Drain-Source On-Resistance 1 R DS(ON) - 450 561 mΩ VGS= -4.5V, ID = -1.3A Forward Transconductance 1 g FS - 8 - S V DS= -15V,,ID = -1.6A Diode Forward Voltage V SD - - -1.2 V I S= -2.5A, VGS=0 Dynamic 2 Total Gate Charge Q g - 18 - Gate-Source Charge Q gs - 5 - Gate-Drain Charge Q gd - 2 - nC ID= -1.6A VDS= -30V VGS= -4.5V Turn-On Delay Time Td (ON) - 8 - Rise Time T r - 10 - Turn-Off Delay Time Td (OFF) - 35 - Fall Time T f - 12 - nS VDD= -30V VGEN= -10V RG=6Ω ID= -1A RL=30Ω Notes: 1. Pulse test ：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing.

-1.7A , -60V , RDS(ON) 381 m P-Channel Enhancement MOSFET 08-Nov-2012 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE

-1.7A , -60V , RDS(ON) 381 m P-Channel Enhancement MOSFET 08-Nov-2012 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE