DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

3.1 A, 60 V , RDS(ON) 92 m

N-Channel Enhancement Mode Mos.FET 29-Jul-2013 Rev. D Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SC-59 saves board space.  Fast switching speed.  High performance trench technology.

PACKAGE INFORMATION

(TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage V GS ±20 V TA= 25°C 3.1 Continuous Drain Current 1 TA= 70°C ID 2.5 A Pulsed Drain Current 2 IDM 15 A Continuous Source Current (Diode Conduction) 1 I S 1.9 A TA= 25°C 1.3 Power Dissipation 1 TA= 70°C PD 0.8 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Ratings t≦10 sec 100 Maximum Junction to Ambient 1 Steady State RθJA 166 °C / W Notes 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. Top View A L C B D G H JF K E 1 2 SC-59 A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50

N-Channel Enhancement Mode Mos.FET 29-Jul-2013 Rev. D Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-Threshold Voltage V GS(th) 1 - - V V DS=VGS, ID=250μA Gate-Body Leakage I GSS - - ±100 nA V DS=0, VGS= ±20V - - 1 VDS=48V, VGS=0 Zero Gate Voltage Drain Current I DSS - - 25 μA VDS=48V, VGS=0, TJ= 55°C On-State Drain Current 1 I D(on) 5 - - A V DS =5V, VGS=10V - - 92 V GS=10V, ID=2.5A Drain-Source On-Resistance 1 R DS(ON) - - 107 mΩ VGS=4.5V, ID=2A Forward Transconductance 1 g fs - 10 - S V DS=15V, ID=2.5A Diode Forward Voltage V SD - 0.74 - V I S=1A, VGS=0 Dynamic 2 Input Capacitance C iss - 330 - Output Capacitance C oss - 31 - Reverse Transfer Capacitance C rss - 27 - pF VDS=15V, VGS=0, f=1MHz Total Gate Charge Q g - 4 - Gate-Source Charge Q gs - 1 - Gate-Drain Charge Q gd - 1.7 - nC VDS=30V, VGS=4.5V, ID=2.5A Turn-on Delay Time T d(on) - 3 - Rise Time T r - 6 - Turn-off Delay Time T d(off) - 17 - Fall Time T f - 5 - nS VDS=30V, VGEN=10V, RL=12Ω, ID=2.5A, RGEN=6Ω Notes 1 Pulse test ：PW≦300μs duty cycle≦2%. 2 Guaranteed by design, not s ubject to production testing.

N-Channel Enhancement Mode Mos.FET 29-Jul-2013 Rev. D Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

N-Channel Enhancement Mode Mos.FET 29-Jul-2013 Rev. D Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES