SMG2345PE SECOS | Alldatasheet

Document overview

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Technical content

-3.2A , -40V , R DS(ON) 164 mΩΩ ΩΩ P-Channel Enhancement MOSFET 26-Aug-2013 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SC -59 Top View A L C B D G H JF K E 1 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low R DS(on) and to ensure minimal power loss and heat dissipation.

FEATURES

/circle6 Low R DS(on) provides higher efficiency and extends battery life. /circle6 Low thermal impedance copper leadframe SC-59 saves board space. /circle6 Fast switching speed. /circle6 High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

(T A=25 °C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V TA=25° C -3.2 Continuous Drain Current 1 TA=70° C ID -2.7 A Pulsed Drain Current 2 IDM -10 A Continuous Source Current (Diode Conduction) 1 I S 0.4 A TA=25° C 1.25 Power Dissipation 1 TA=70° C PD 0.8 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Resistance Data t ≦ 5 sec 100 Maximum Junction to Ambient 1 Steady-State R θJA 150 ° C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50 ESD Protection Diode 2KV

-3.2A , -40V , R DS(ON) 164 mΩΩ ΩΩ P-Channel Enhancement MOSFET 26-Aug-2013 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T A=25° C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Condition Static Gate-Threshold Voltage V GS(th) -1 - - V V DS =V GS , I D = -250 µA Gate-Body Leakage I GSS - - ±100 nA V DS =0, VGS = ±20V - - -1 VDS = -32V, VGS =0 Zero Gate Voltage Drain Current I DSS - - -10 µA VDS = -32V, VGS =0, T J=55° C On-State Drain Current 1 I D(ON) -2 - - A V DS = -5V, VGS = -4.5V Drain-Source On-Resistance 1 R DS(ON) - - 260 m Ω VGS = -4.5V, I D = -2.6A Forward Transconductance 1 g FS - 2 - S V DS = -5V, ,ID = -3.6A Diode Forward Voltage V SD - -0.7 - V I S= -0.4A, VGS =0 Dynamic 2 Total Gate Charge Q g - 15 - Gate-Source Charge Q gs - 2 - Gate-Drain Charge Q gd - 2 - nC ID = -3.6A VDS = -10V VGS = -5V Turn-On Delay Time Td (ON) - 10 - Rise Time Tr - 2.8 - Turn-Off Delay Time Td (OFF) - 53.6 - Fall Time Tf - 46 - nS ID = -1A, VDS = -15V, VGEN = -10V, R G =50 Ω Notes: 1. Pulse test ：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing.