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5.2 A, 40 V , RDS(ON) 86 m

N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente 30-Dec-2010 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printer , PCMCIA cards, cellular and cordless telephones.

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SC-59 saves board Space.  Fast switching speed.  High performance trench technology.

PACKAGE INFORMATION

SC-59 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 ID @ TA=25°C ID 5.2 A ID @ TA=70°C 4.1 A Pulsed Drain Current 2 IDM 30 A Continuous Source Current (Diode Conduction) 1 IS 1.6 A Power Dissipation 1 PD @ TA=25°C PD 1.3 W PD @ TA=70°C 0.8 W Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ 150 °C Thermal Resistance Ratings Maximum Junction to Ambient 1 t ≦ 5 sec RJA 100 °C / W Steady State 166 Notes 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. Top View A L C B D G H JF K E 1 2 SC-59 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50

N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente 30-Dec-2010 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-Threshold Voltage V GS(th) 1.0 - - V V DS=VGS, ID= 250uA Gate-Body Leakage I GSS - - ±100 nA V DS= 0V, VGS= 20V Zero Gate Voltage Drain Current I DSS - - 1 uA VDS= 32V, VGS= 0V - - 25 VDS= 32V, VGS= 0V, TJ= 55°C On-State Drain Current 1 I D(on) 20 - - A V DS = 5V, VGS= 10V Drain-Source On-Resistance 1 R DS(ON) - - 86 mΩ VGS= 10V, ID= 5.2A - - 128 V GS= 4.5V, ID= 3.7A Forward Transconductance 1 g fs - 40 - S V DS= 15V, ID= 5.2A Diode Forward Voltage V SD - 0.7 - V I S= 2.3A, VGS= 0V Dynamic 2 Total Gate Charge Q g - 4.0 - nC VDS= 15V, VGS= 4.5V, ID= 5.2A Gate-Source Charge Q gs - 1.1 - Gate-Drain Charge Q gd - 1.4 - Turn-on Delay Time T d(on) - 16 - nS VDD= 25V, VGEN= 10V, RL= 25, ID= 1A Rise Time T r - 5 - Turn-off Delay Time T d(off) - 23 - Fall Time T f - 3 - Notes 1 Pulse test ：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not s ubject to production testing.