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Technical content

5.3 A, 30 V , RDS(ON) 32 m

N-Channel Enhancement MOSFET 09-Oct-2013 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SC-59 Top View A L C B D G H JF K E 1 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SC-59 saves board space.  Fast switching speed.  High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

SC-59 3K 7’ inch ABSOLUTE MAXIMUM RATINGS(TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage V GS ±12 V TA=25°C 5.3 Continuous Drain Current 1 TA=70°C ID 4.1 A Pulsed Drain Current 2 I DM 30 A Continuous Source Current (Diode Conduction) 1 I S 1.9 A TA=25°C 1.3 Power Dissipation 1 TA=70°C PD 0.8 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Rating t≦10 sec 100 Maximum Junction to Ambient 1 Steady-State RθJA 166 °C/W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50

N-Channel Enhancement MOSFET 09-Oct-2013 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Static Gate-Threshold Voltage V GS(th) 0.4 - - V V DS =VGS, ID=250μA Gate-Body Leakage I GSS - - ±100 nA V DS =0, VGS=±12V - - 1 V DS =24V, VGS=0 Zero Gate Voltage Drain Current I DSS - - 25 μA VDS =24V, VGS=0, TJ=55°C On-State Drain Current 1 I D(ON) 5 - - A V DS =5V, VGS=4.5V - - 32 V GS=4.5V, ID =4.1A Drain-Source On-Resistance 1 R DS(ON) - - 64 mΩ VGS=2.5V, ID =3.3A Forward Transconductance 1 g FS - 8 - S V DS=15V,,ID =4.1A Diode Forward Voltage V SD - 0.68 - V I S=9A, VGS=0 Dynamic 2 Total Gate Charge Q g - 8 - Gate-Source Charge Q gs - 1.1 - Gate-Drain Charge Q gd - 3.4 - nC ID=4.1A VDS=15V VGS=4.5V Input Capacitance C iss - 449 - Output Capacitance C oss - 70 - Reverse Transfer Capacitance C rss - 56 - pF VDS=15V, VGS=0, f=1MHz Turn-On Delay Time Td (ON) - 7 - Rise Time T r - 15 - Turn-Off Delay Time Td (OFF) - 37 - Fall Time T f - 11 - nS ID= 4.1A, VDS=15V VGEN=4.5V RL=3.7Ω RGEN=6Ω Notes: 1. Pulse test ：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not s ubject to production testing.

N-Channel Enhancement MOSFET 09-Oct-2013 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

N-Channel Enhancement MOSFET 09-Oct-2013 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES