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3.5 A, 30 V , RDS(ON) 60 m

N-Channel Enhancement MOSFET 14-Jul-2010 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SC-59 Top View A L C B D G H JF K E 1 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC conv erters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES

 Low R DS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SC-59 saves board space.  Fast switching speed.  High performance trench technology. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) RDS(on) ( I D(A) 60@VGS= 4.5V 3.5 30 82@VGS= 2.5V 3.0 ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain-Source Voltage VDS 30 V Gate-Source Voltage V GS ±12 V TA=25°C 3.5 Continuous Drain Current A TA=70°C ID 2.8 A Pulsed Drain Current B I DM 16 A Continuous Source Current (Diode Conduction) A I S 1.25 A TA=25°C 1.3 Power Dissipation A TA=70°C PD 0.8 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 150 °C THERMAL RESISTANCE DATA t≦10 sec 100 Maximum Junction to Ambient A Steady-State RθJA 166 °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50 Gate Source Drain ESD Protection Diode 2KV

N-Channel Enhancement MOSFET 14-Jul-2010 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITIONS Static Gate-Threshold Voltage V GS(th) 0.6 - - V V DS = VGS, ID = 250μA Gate-Body Leakage I GSS - - ±100 nA V DS = 0V, VGS= 4V - - 1 V DS = 24V, VGS= 0V Zero Gate Voltage Drain Current I DSS - - 25 μA VDS = 24V, VGS= 0V, TJ=55°C On-State Drain Current A I D(ON) 6 - - A V DS = 5V, VGS= 4.5V - - 60 V GS= 4.5V, ID = 3.5A Drain-Source On-Resistance A R DS(ON) - - 82 mΩ VGS= 2.5V, ID = 3A Forward Transconductance A g FS - 6.9 - S V DS= 15V,,ID = 3.5A Diode Forward Voltage V SD - 0.8 - V I S= 2.3A, VGS= 0V Dynamic b Total Gate Charge Q g - 6.3 - Gate-Source Charge Q gs - 0.9 - Gate-Drain Charge Q gd - 1.9 - nC ID= 3.5A VDS= 15V VGS= 2.5V Turn-On Delay Time Td (ON) - 16 - Rise Time T r - 5 - Turn-Off Delay Time Td (OFF) - 23 - Fall Time T f - 3 - nS ID= 1A, VDD= 25V VGEN= 10V RL= 25Ω Notes a. Pulse test ：PW ≦ 300 us duty cycle ≦ 2%. b. Guaranteed by design, not subject to production testing.

N-Channel Enhancement MOSFET 14-Jul-2010 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE

N-Channel Enhancement MOSFET 14-Jul-2010 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE