SMG2330N_15 SECOS | Alldatasheet

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Technical content

5.2A, 30V , R DS(ON) 32m ΩΩ ΩΩ N-Channel Enhancement MOSFET Elektronische Bauelemente 4-Jul-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H JF K E 1 2 SC -59 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0.10 REF. B 2. 25 3.00 H 0.40 REF. C 1.3 0 1. 70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize High Cell Density process. Low R DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.

FEATURES

/circle6 Low RDS(on) Provides Higher Efficiency and Extends Battery Life /circle6 Miniature SOT-23 Surface Mount Package Saves Board Space /circle6 High power and current handling capability /circle6 Low side high current DC-DC Converter applications

PACKAGE INFORMATION

(T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDSS 30 V Continuous Gate-Source Voltage V GSS ±20 V Continuous Drain Current 1 TA=25° C ID 5.2 A TA=70° C 4.1 Pulsed Drain Currentb 2 IDM 30 A Continuous Source Current (Diode Conduction) 1 I S 1.6 A Power Dissipationa 1 TA=25° C PD 1.3 W TA=70° C 0.8 Junction and Storage Temperature Range T J, T stg -55~150 ° C Thermal Resistance Rating Maximum Junction to Ambient 1 t≦5 sec R θJA 100 ° C / W Steady-State 166 ° C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature

5.2A, 30V , R DS(ON) 32m ΩΩ ΩΩ N-Channel Enhancement MOSFET Elektronische Bauelemente 4-Jul-2011 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static On-State Drain Current 1 I D(on) 20 - - A V DS =5V, VGS =10V Zero Gate Voltage Drain Current I DSS - - 1 µA VDS =24V , VGS =0 - - 25 V DS = 24V, V GS =0, T J=55° C Gate-Body Leakage Current I GSS - - ±100 nA V GS =20V, V DS =0 Gate Threshold Voltage V GS(th) 1 - - V V DS =V GS , I D =250 µA Drain-Source On Resistance 1 R DS(ON) - - 32 m Ω VGS =10V, I D =5.2A - - 64 V GS =4.5V, I D =3.7A Forward Transconductance 1 g FS - 40 - S V DS =15V, ,ID =5.2A Diode Forward Voltage V SD - 0.7 - V I S=2.3 A, V GS =0 Dynamic 2 Total Gate Charge Q g - 4.0 - nC VDS =15V, VGS =4.5V, ID =5.2A Gate-Source Charge Q gs - 1.1 - Gate-Drain Charge Q gd - 1.4 - Turn-On Delay Time Td (ON) - 16 - nS VDD =25V, R L=25 Ω , ID =1A, VGEN =10V Turn-Off Delay Time Td (OFF) - 23 - Rise Time Tr - 5 - Fall-Time Tf - 3 - Notes: 1. Pulse test: PW <= 300us duty cycle <= 2%. 2. Guaranteed by design, not subject to production testing.