SMG2329S VBSEMI | Alldatasheet

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Technical content

P-Channel 100-V (D-S) MOSFET

FEATURES

  • Halogen-free According to IEC 61249-2-21 Available  Tre nchFET® Power MOSFET  Ultra Low On-Resistance  Small Size

APPLICATIONS

 Active Clamp Circuits in DC/DC Power Supplies PRODUCT SUMMARY VDS (V) R DS(on) (Ω)I D (A) Q g (Typ.) - 100 0.50 at VGS = - 10 V - 1.5 7.70.56 at VGS = - 6.0 V - 1.4 G S D Top View TO-236 (SOT-23) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise note d Parameter Symbol 5 s Steady State Unit Drain-Source V oltage VDS - 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C ID - 1.65 - 1.5 A Pulsed Drain Current IDM - 3.0 Continuous Source Current (Diode Conduction)a, b IS - 1.4 - 1.0 Single Pulse Avalanche Current L = 1.0 mH IAS 4.5 Single Pulse Avalanche Energy EAS 1.01 mJ Maximum Power Dissipationa, b TA = 25 °C PD 2.0 0.85 WTA = 70 °C 1.0 0.58 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 5 s RthJA 75 100 °C/WSteady State 120 166 Maximum Junction-to-Foot (Drain) Stead y State RthJF 40 50 SMG2329S www.VBsemi.com g A ll data sheet.com

Notes: a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially indep endent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Limits Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = - 250 µA - 100 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1. .0 - 3.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 100 V, VGS = 0 V - 1 µAVDS = - 100 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≤ - 15 V, VGS = 10 V - 1.6 A Drain-Source On-Resistancea RDS(on) VGS = - 10 V, ID = - 0.5 A 0.50 ΩVGS = - 6.0 V, ID = - 0.5 A 0.56 Forward Transconductancea gfs VDS = - 15 V, ID = - 0.5 A 2.2 S Diode Forward Voltage VSD IS = - 1.0 A, VGS = 0 V 0.7 - 1.2 V Dynamicb Total Gate Charge Qg VDS = - 50 V, VGS = 10 V, ID ≅ - 0.5 A 7.7 12 nCGate-Source Charge Qgs 1.5 Gate-Drain Charge Qgd 2.5 Gate Resistance Rg f = 1.0 MHz 9 Ω Input Capacitance Ciss VDS = - 25 V, VGS = 0 V, f = 1 MHz 520 pFOutput Capacitance Coss 40 Reverse Transfer Capacitance Crss 20 Switchingc Tur n-On Time td(on) VDD = - 50 V, RL = 75 Ω ID ≅ - 1.0 A, VGEN = - 10 V Rg = 6 Ω 71 1 ns tr 11 17 Turn-Off Time td(off) 16 25 tf 11 17 Body Diode Reverse Recovery Charge Qrr IF = 0.5 A, dI/dt = 100 A/µs 90 135 nC SMG2329S www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless other wise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 02468 1 0 VGS = 10 thru 4 V VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VGS = 6 V VGS = 10 V - On-Resistance (Ω)RDS(on) ID - Drain Current (A) 012345678 VDS = 50 V ID = 0.5 A - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS Transfer Characteristics Capacitance On-Res istance vs. Junction Temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25 °C - 55 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D TC = 125 °C 100 200 300 400 500 0 30 60 90 1 00 110 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 0.5 A TJ - Junction Temperature (°C) RDS(on) - On-Resistance (Normalized) SMG2329S www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise not ed Source-Drain Diode Forward Voltage Threshold Voltage 1.0 1.4 0.1 0 0.2 0.4 0.6 0.8 TJ = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)I S TJ = 25 °C 1.2 - 0.5 - 0.2 0.1 0.4 0.7 1.0 1.3 - 50 - 25 0 25 50 75 85 95 1 ID = 250 µA Variance (V)VGS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.0 0.5 1.0 1.5 2.0 2.5 3.0 02468 10 ID = 0.5 A - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source Voltage (V) 0.01 10 6000.1 Power (W) Time (s) 100 TA = 25 °C Safe Operating Area 0.1 0.1 1 10 1000 0.001 TA = 25 °C Single Pulse - Drain Current (A)I D 0.01 ID(on) Limited DS(on)*Limited by R BVDSS Limited VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1 ms 10 ms 100 ms 100 s, DC 100 µs 10 s, 1 s 100 IDM Limited 10 µs SMG2329S www.VBsemi.com g A ll data sheet.com

Normalized Thermal Transient Impedance, Junction-t o-Ambient Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 10-3 10-2 1 10 60010-110-4 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 100 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 120 °C/W 3. TJM - TA = PDMZthJA(t) Notes: 4. Surface Mounted PDM THERMAL RATINGS (TA = 25 °C, unless otherwise noted) SMG2329S www.VBsemi.com g A ll data sheet.com

SOT-23 (TO-236): 3-LEAD b EE1 S e D A2A A1 C Seating Plane 0.10 mm 0.004" C C L q Gauge Plane Seating Plane 0.25 mm Dim MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 0.055 e 0.95 BSC 0.0374 Ref e1 1.90 BSC 0.0748 Ref L 0.40 0.60 0.016 0.024 L1 0.64 Ref 0.025 Ref S 0.50 Ref 0.020 Ref q 3°8 ° 3°8 ° ECN: S-03946-Rev. K, 09-Jul-0 DWG: 5479 SMG2329S www.VBsemi.com g A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SOT-23 0.106 (2.692) Recommended Minimum Pads Dimensions in Inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) Return to Index SMG2329S www.VBsemi.com g A ll data sheet.com

e to improve reliability, function or design or for other reasons, product specifications and data are subjec t to change without notice. Taiwan VBsemi Ele ctronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representativ es (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete da ta contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi ma kes no guarantee, representation or warranty on the product for any particular purpose of any goods or co ntinuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished : (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a pa rticular purpose, non-infringement and merchantability guarantee. Statement on c ertain types of applications are based on knowledge of the product is often used in a typical application o f the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suit able for a particular application is non-binding. It is the customer's responsibility to verify specific product feature s in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance ove r time. All operating parameters, including typical parameters must be made by customer's technical exp erts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasi ng terms and conditions, including but not limited to warranty herein. Unless express ly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustai ning applications or any other application. Wherein VBsemi product failure could lead to personal injury or death , use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Conta ct your authorized Taiwan VBsemi people who are related to product design applications and other terms an d conditions in writing. The informatio n provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trade marks referred to herein are trademarks of their respective representatives will be all. MaterialCatego ryPolicy Taiwan VBsemi El ectronics Co., Ltd., hereby certify that all of the products are determined to be RoHS complian t and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 20 11 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronicequ ipment(EEE)-modification,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) Pleasenotethat somedocumentsmaystillrefertoTaiwanVBsemiRoHSDirective2002/95/EC.We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65/. Taiwan VBsemi El ectronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free ha logen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi docume nts still refer to the definition of IEC 61249-2-21, and we are sure that all products conformtoconfir mcompliancewithIEC61249-2-21standardlevelJS709A. SMG2329S www.VBsemi.com A ll data sheet.com