SMG2329S_15 SECOS | Alldatasheet
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Technical content
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SMG2329S -1.2A , -100V , R DS(ON) 650 mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET 15-Jul-2013 Rev. A Page 1 of 4 Top View A L C B D G H JF K E 1 2 SC -59 TOP VIEW RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SMG2329S provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The SMG5409 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES
/circle6 Simple Drive Requirement /circle6 Small Package Outline MARKING 2329S
PACKAGE INFORMATION
ABSOLUTE MAXIMUM RATINGS ( TA=25° C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±20 V TA=25° C -1.2 Continuous Drain Current, VGS =10V 1 TA=70° C ID A Pulsed Drain Current 2 IDM -5 A Power Dissipation 3 T A=25° C P D 1 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Resistance Rating Maximum Junction to Ambient 3 R θJA 125 ° C / W Maximum Junction to Case 1 R θJC 80 ° C / W Package MPQ Leader Size SC-59 3K 7 inch A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SMG2329S -1.2A , -100V , R DS(ON) 650 mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET 15-Jul-2013 Rev. A Page 2 of 4 ELECTRICAL CHARACTERISTICS (T A=25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS -100 - - V V GS =0, I D = -250uA Gate-Threshold Voltage V GS(th) -1 - -2.5 V V DS =V GS , I D = -250uA Gate-Body Leakage Current I GSS - - ±100 nA VGS =±20V - - -10 VDS = -80V, V GS =0, T J=25° C Drain-Source Leakage Current I DSS - - -100 µA VDS = -80V, V GS =0, T J=55° C - - 650 V GS = -10V, I D = -1A Drain-Source On-Resistance 2 R DS(ON) - - 700 m Ω VGS = -4.5V, I D = -0.5A Forward Transconductance g fs - 3 - S V DS = -5V, I D = -1A Dynamic Total Gate Charge Q g - 9.3 - Gate-Source Charge Q gs - 1.75 - Gate-Drain (“Miller”) Change Q gd - 1.25 - nC VDS = -50V, VGS = -10V, ID = -1A Turn-on Delay Time T d(on) - 2 - Rise Time T r - 18.4 - Turn-off Delay Time T d(off) - 19.6 - Fall Time Tf - 19.6 - nS VDS = -50V, VGS = -10V, R G =3.3 Ω, ID = -0.5A Input Capacitance C iss - 513 - Output Capacitance C oss - 29 - Reverse Transfer Capacitance C rss - 17 - pF VGS =0, VDS = -15V, f=1.0MHz Source-Drain Diode Diode Forward Voltage 2 V SD - - -1.2 V I S= -1A, V GS =0 Continuous Source Current 1,4 I S - - -1.2 A Pulsed Source Current 2,4 I SM - - -5 A VG =V D =0V , Force Current Reverse Recovery Time T RR - 27 - ns Reverse Recovery Charge Q RR - 36 - nC IS= -1A, dI/dt=100A/ µs, TJ=25° C Notes: 1. surface mounted on a 1 inch2 FR-4 board with 2OZ copper. , 270 ℃/W when mounted on Min. copper pad. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3. The power dissipation is limited by 150 ℃ junction temperature 4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SMG2329S -1.2A , -100V , R DS(ON) 650 mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET 15-Jul-2013 Rev. A Page 3 of 4 CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SMG2329S -1.2A , -100V , R DS(ON) 650 mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET 15-Jul-2013 Rev. A Page 4 of 4 CHARACTERISTIC CURVES