DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
100V, 1.5A, 250mΩ N-Channel Enhancement Mode Power MOSFET 21-Nov-2013 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H JF K E 1 2 RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMG2328 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2328 is universally used for all commercial-industrial applications.
FEATURES
Simple drive requirement Small package outline Super high density cell design for extremely low RDS(ON) DEVICE MARKING:
PACKAGE INFORMATION
SC-59 3K 7’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain – Source Voltage V DSS 100 V Gate – Source Voltage V GSS ±20 V TA=25°C I D 1.5 A Continuous Drain Current 3 TA=70°C I D 1.2 A Pulsed Drain Current 1.2 I DM 5 A Total Power Dissipation P D 1.38 W Linear Derating Factor 0.008 W / °C Operating Junction & Storage Temperature Range TJ, TSTG -55~150 °C THERMAL DATA Thermal Resistance Junction-ambient 3 (Max.) R θJA 125 °C / W A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50 SC-59 2328 G S D
100V, 1.5A, 250mΩ N-Channel Enhancement Mode Power MOSFET 21-Nov-2013 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Drain-Source Breakdown Voltage BV DSS 100 - - V V GS=0V, ID =250μA Gate Threshold Voltage V GS(th) 1 - 2.5 V V DS= VGS, ID =250μA Forward Tranconductance g fs - 4 - S V DS=15V, ID =1.5A Gate-Source Leakage Current I GSS - - ±100 nA V GS=±20V Drain-Source Leakage Current(TJ=25°C) - - 1 μA V DS=80V, VGS=0V Drain-Source Leakage Current(TJ=55°C) IDSS - - 10 μA V DS=80V, VGS=0V Drain-Source On-State Resistance R DS(ON) - - 250 m Ω V GS=10V, ID=1.5A Total Gate Charge 2 Q g - 11.1 - Gate-Source Chagre Q gs - 4.4 - Gate-Drain (“Miller”) Change Q gd - 3 - nC V DS=80V, ID =1.5A, VGS=5V Turn-on Delay Time 2 T d(ON) - 9 - Rise Time T r - 9.4 - Turn-off Delay Time T d(OFF) - 26.8 - Fall Time T f - 2.6 - nS VDD=30V, VGS=10V I D=1A, RL=30Ω, RG=6Ω Input Capacitance C ISS - 975 - Output Capacitance C OSS - 38 - Reverse Transfer Capacitance C RSS - 27 - pF VDS=25V VGS=0V f=1MHz SOURCE-DRAIN DIODE Forward On Voltage 2 V SD - - 1.2 V I S=1.0A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≦ 300 μs, duty cycle ≦ 2 ％. 3. Surface mounted on 1 in copper pad of FR4 board；270 °C / W when mounted on Min. copper pad.
100V, 1.5A, 250mΩ N-Channel Enhancement Mode Power MOSFET 21-Nov-2013 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
100V, 1.5A, 250mΩ N-Channel Enhancement Mode Power MOSFET 21-Nov-2013 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES