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Technical content
2.2 A, 20 V , RDS(ON) 70 m
N-Channel Enhancement MOSFET Elektronische Bauelemente 14-Feb-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Miniature SC-59 surface mount Package saves board space. Application DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
SC-59 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage V GS ±8 V Continuous Drain Current 1 TA=25°C ID 2.2 A TA=70°C 1.8 Pulsed Drain Current 2 I DM 8 A Continuous Source Current (Diode Conduction) 1 I S 0.6 A Power Dissipation 1 TA=25°C PD 1.25 W TA=70°C 0.8 Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Ratings Maximum Junction to Ambient 1 t≦5 sec RθJA 100 °C/W Steady-State 166 Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50 SC-59 Top View A L C B D G H JF K E 1 2
N-Channel Enhancement MOSFET Elektronische Bauelemente 14-Feb-2011 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test conditions Static Gate-Threshold Voltage V GS(th) 0.7 - - V VDS=VGS, ID=250μA Gate-Body Leakage I GSS - - 1 μA VDS=0, VGS=12V Zero Gate Voltage Drain Current I DSS - - 0.1 μA VDS=16V, VGS=0 - - 1 VDS=16V, VGS=0, TJ=55°C On-State Drain Current A I D(ON) 5 - - A VDS=5V, VGS=4.5V Drain-Source On-Resistance A R DS(ON) - - 70 mΩ VGS=4.5V, ID=2.2A - - 80 VGS=2.5V, ID=2A - - 120 VGS=1.8V, ID=1.8A Forward Transconductance A g FS - 11 - S VDS=5V,,ID=2A Diode Forward Voltage V SD - 0.6 - V IS=0.6A, VGS=0 Dynamic 2 Total Gate Charge Q g - 4.5 - nC ID=2A VDS=10V VGS=4.5V Gate-Source Charge Q gs - 0.89 - Gate-Drain Charge Q gd - 0.95 - Turn-On Delay Time Td (ON) - 6 - nS ID=1A, VDD=10V VGS=4.5V RG=6Ω Rise Time T r - 6.5 - Turn-Off Delay Time Td (OFF) - 14 - Fall Time T f - 2 - Notes: 1. Pulse test ：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing.