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-3.6 A, -20 V , RDS(ON) 55 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 05-Jan-2011 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printer , PCMCIA cards, cellular and cordless telephones.

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SC-59 saves board Space.  Fast switching speed.  High performance trench technology.

PACKAGE INFORMATION

SC-59 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current 1 ID @ TA=25°C ID -3.6 A ID @ TA=70°C -2.9 A Pulsed Drain Current 2 IDM -10 A Continuous Source Current (Diode Conduction) 1 IS ±0.46 A Power Dissipation 1 PD @ TA=25°C PD 1.25 W PD @ TA=70°C 0.8 W Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ 150 °C Thermal Resistance Data Maximum Junction to Ambient 1 t ≦ 5 sec RJA 100 °C / W Steady State 166 Notes 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. Top View A L C B D G H JF K E 1 2 SC-59 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50

-3.6 A, -20 V , RDS(ON) 55 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 05-Jan-2011 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-Threshold Voltage V GS(th) -0.7 - - V V DS=VGS, ID= -250uA Gate-Body Leakage I GSS - - ±100 nA V DS= 0V, VGS= ±8V Zero Gate Voltage Drain Current I DSS - - -1 μA VDS= -16V, VGS= 0V - - -10 VDS= -16V, VGS= 0V, TJ= 55°C On-State Drain Current 1 I D(on) -10 - - A V DS = -5V, VGS= -4.5V Drain-Source On-Resistance 1 R DS(ON) - - 55 mΩ VGS= -4.5V, ID= -3.6A Forward Transconductance 1 g fs - 12 - S V DS= -5V, ID= -3.6A Diode Forward Voltage V SD - -0.6 - V I S= -0.46A, VGS= 0V Dynamic 2 Total Gate Charge Q g - 16.7 - nC VDS= -5V, VGS= -4.5V, ID= -3.6A Gate-Source Charge Q gs - 1.8 - Gate-Drain Charge Q gd - 1.9 - Turn-on Delay Time T d(on) - 9 - nS VDD= -10V, VGEN= -4.5V, RG= 6, IL= -1A Rise Time T r - 4 - Turn-off Delay Time T d(off) - 25 - Fall Time T f - 20 - Notes 1 Pulse test ：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not s ubject to production testing.

-3.6 A, -20 V , RDS(ON) 55 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 05-Jan-2011 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE

-3.6 A, -20 V , RDS(ON) 55 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 05-Jan-2011 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE