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Technical content

2.5A, 30V , RDS(ON) 85 m N-Channel Enhancement MOSFET 12-Apr-2011 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SC-59 Top View A L C B D G H JF K E 1 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SC-59 saves board space.  Fast switching speed.  High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

SC-59 3K 7’ inch ABSOLUTE MAXIMUM RATINGS(TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage V GS ±20 V TA=25°C 2.5 Continuous Drain Current 1 TA=70°C ID A Pulsed Drain Current 2 I DM 10 A Continuous Source Current (Diode Conduction) 1 I S 0.46 A TA=25°C 1.25 Power Dissipation 1 TA=70°C PD 0.8 W Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Rating t≦5 sec 150 Maximum Junction to Ambient 1 Steady-State RθJA 200 °C/W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. A 2.70 3.10 G 0.10 RE F. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50

2.5A, 30V , RDS(ON) 85 m N-Channel Enhancement MOSFET 12-Apr-2011 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Static Gate-Threshold Voltage V GS(th) 1 1.5 3 V V DS=VGS, ID=250μA Gate-Body Leakage I GSS - 4 100 nA V DS=0, VGS=8V - - 1 V DS=16V, VGS=0 Zero Gate Voltage Drain Current I DSS - - 10 μA VDS=20V, VGS=0, TJ=55°C On-State Drain Current 1 I D(ON) 6 - - A V DS=5V, VGS=4.5V - 62 85 V GS=10V, ID=2.5A Drain-Source On-Resistance 1 R DS(ON) - 102 125 mΩ VGS=4.5V, ID=1.7A Forward Transconductance 1 g FS - 3.5 - S V DS=5V,,ID=3A Diode Forward Voltage V SD - 0.65 - V I S=0.46A, VGS=0 Dynamic 2 Total Gate Charge Q g - 3.5 7 Gate-Source Charge Q gs - 0.8 2 Gate-Drain Charge Q gd - 1.0 2 nC ID=2.5A VDS=10V VGS=4.5V Input Capacitance C iss - 720 1500 Output Capacitance C oss - 165 400 Reverse Transfer Capacitance C rss - 60 200 pF VDS=15V VGS=0 f=1MHz Turn-On Delay Time Td (ON) - 10 20 Rise Time T r - 13 30 Turn-Off Delay Time Td (OFF) - 14 30 Fall Time T f - 4 20 nS ID=1A, VDD=10V VGEN=4.5V RG=6Ω Notes: 1. Pulse test ：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not s ubject to production testing.

2.5A, 30V , RDS(ON) 85 m N-Channel Enhancement MOSFET 12-Apr-2011 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE

2.5A, 30V , RDS(ON) 85 m N-Channel Enhancement MOSFET 12-Apr-2011 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE