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-4.1A , -20V , RDS(ON) 79 m P-Channel Enhancement MOSFET 12-Apr-2011 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SC-59 Top View A L C B D G H JF K E 1 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life.  Miniature SC-59 surface mount package saves board space.  Fast switching speed.  High performance trench technology.  Low gate charge 7.2Nc. APPLICATION DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

SC-59 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage V GS ±8 V TA=25°C -4.1 Continuous Drain Current 1 TA=70°C ID -3.3 A Pulsed Drain Current 2 I DM ±10 A Continuous Source Current (Diode Conduction) 1 I S ±0.46 A TA=25°C 1.25 Power Dissipation 1 TA=70°C PD 0.8 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Ratings t≦5 sec 100 Maximum Junction to Ambient 1 Steady-State RθJA 150 °C/W Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50

-4.1A , -20V , RDS(ON) 79 m P-Channel Enhancement MOSFET 12-Apr-2011 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static Gate-Threshold Voltage V GS(th) -0.4 - - V V DS=VGS, ID = -250μA Gate-Body Leakage I GSS - - ±100 nA V DS=0, VGS= ±8V - - -1 V DS= -16V, VGS=0 Zero Gate Voltage Drain Current I DSS - - -10 μA VDS= -16V, VGS=0, TJ=55°C On-State Drain Current 1 I D(ON) -5 - - A V DS= -5V, VGS= -4.5V Drain-Source On-Resistance 1 R DS(ON) - - 0.110 Ω VGS= -2.5V, ID= -3.2A Forward Transconductance 1 g FS - 9 - S V DS= -5V,,ID= -1.25A Diode Forward Voltage V SD - -0.65 - V I S= -0.46A, VGS=0 Dynamic 2 Total Gate Charge Q g - 7.2 - Gate-Source Charge Q gs - 1.7 - Gate-Drain Charge Q gd - 1.5 - nC ID= -4.1A VDS= -10V VGS= -4.5V Input Capacitance C ISS - 520 - Output Capacitance C OSS - 130 - Reverse Transfer Capacitance C RSS - 70 - pF VDS=15V, VGS=0V, f=1MHz Turn-On Delay Time Td (ON) - 8 - Rise Time T r - 18 - Turn-Off Delay Time Td (OFF) - 52 - Fall Time T f - 39 - nS VDD= -10V VGEN= -4.5V RG=6Ω IL= -1A Notes: 1 Pulse test ：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing.

-4.1A , -20V , RDS(ON) 79 m P-Channel Enhancement MOSFET 12-Apr-2011 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE

-4.1A , -20V , RDS(ON) 79 m P-Channel Enhancement MOSFET 12-Apr-2011 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE