SMG2318N_15 SECOS | Alldatasheet

Document overview

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Technical content

1.2 A, 30 V , R DS(ON) 160 mΩΩ ΩΩ

N-Channel Logic Level MOSFET Elektronische Bauelemente 10-Apr-2012 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low R DS(on) and to ensure minimal power loss and heat dissipation.

FEATURES

/circle6 Low R DS(on) provides higher efficiency and extends battery life. /circle6 Low thermal impedance copper leadframe SC-59 saves board Space. /circle6 Fast switching speed. /circle6 Low Gate Charge APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printer , PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

(T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 TA=25° C ID 1.2 A TA=70° C 1 Pulsed Drain Current 2 IDM 10 A Continuous Source Current (Diode Conduction) 1 I S 1.3 A Power Dissipation 1 TA=25° C PD 1.3 W TA=70° C 0.8 Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Resistance Rating Maximum Junction to Ambient 1 t ≦5 sec R θJA 250 ° C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. Top View A L C B D G H JF K E 1 2 SC-59 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0.10 REF. B 2. 25 3.00 H 0.40 REF. C 1.3 0 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50

N-Channel Logic Level MOSFET Elektronische Bauelemente 10-Apr-2012 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static Gate-Threshold Voltage V GS(th) 0.8 1.7 2.1 V V DS =V GS , I D =250 µA Drain-Source Breakdown Voltage V (BR)DSS 30 - - V V GS =0, I D =250 µA Gate-Body Leakage I GSS - - ±100 nA VDS =0, VGS = ±20V Zero Gate Voltage Drain Current I DSS - - 1 µA VDS =24V, V GS =0 - - 10 V DS =24V, V GS =0, T J= 55 °C On-State Drain Current 1 I D(on) 3.5 - - A V DS =5V, V GS =4.5V Drain-Source On-Resistance 1 R DS(ON) - 125 160 m Ω VGS =10V, I D =1.4A - 230 260 V GS =4.5V, I D =1.2A, TJ= 55 °C - 190 250 V GS =4.5V, I D =1.2A Forward Transconductance 1 g fs - 1.8 - S V DS =5V, I D =1.2A Diode Forward Voltage V SD - 0.7 1.2 V I S=1.2A, V GS =0 Dynamic 2 Total Gate Charge Q g - 1.9 2.7 nC VDS =10V, VGS =4.5V, ID =1.2A, R L=6Ω Gate-Source Charge Q gs - 0.5 - Gate-Drain Charge Q gd - 0.9 - Turn-on Delay Time T d(on) - 6 15 nS VDS = 10V, VGEN =10V, R L=50Ω, ID =1A Rise Time T r - 15 31 Turn-off Delay Time T d(off) - 15 32 Fall Time Tf - 18 42 Notes 1 Pulse test ：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing.

N-Channel Logic Level MOSFET Elektronische Bauelemente 10-Apr-2012 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

N-Channel Logic Level MOSFET Elektronische Bauelemente 10-Apr-2012 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES