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5.3 A, 20 V , RDS(ON) 32 m

N-Channel Enhancement Mode Mos.FET 26-Oct-2012 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H JF K E 1 2 RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life.  Miniature SC-59 surface mount package saves board space.  High power and current handling capability.  MLow side high current DC-DC Converter applications

PACKAGE INFORMATION

SC-59 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA=25°C UNLESS OTHERWISE NOTED) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage V GS ±12 V TA=25°C 5.3 A Continuous Drain Current 1 TA=70°C ID 4.1 A Pulsed Drain Current 2 IDM 20 A Continuous Source Current (Diode Conduction) 1 I S 1.8 A TA=25°C 1.3 W Power Dissipation 1 TA=70°C PD 0.8 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 150 °C THERMAL RESISTANCE RATINGS t ≦ 10 sec 100 Maximum Junction to Ambient 1 Steady State RJA 166 °C / W Notes 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. SC-59 A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50 ESD Protection Diode 2KV

N-Channel Enhancement Mode Mos.FET 26-Oct-2012 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-Threshold Voltage V GS(th) 0.4 - - V V DS=VGS, ID= 250uA Gate-Body Leakage I GSS - - ±10 nA V DS=0, VGS= ±12V - - 1 V DS=16V, VGS=0 Zero Gate Voltage Drain Current I DSS - - 25 uA VDS=16V, VGS=0, TJ= 55°C On-State Drain Current 1 I D(on) 10 - - A V DS =5V, VGS=4.5V - - 32 V GS=4.5V, ID=4.2A Drain-Source On-Resistance 1 R DS(ON) - - 44 mΩ VGS=2.5V, ID=3.8A Forward Transconductance 1 g fs - 11 - S V DS=15V, ID= 4.2A Diode Forward Voltage V SD - 0.7 - V I S=0.9A, VGS=0 Dynamic 2 Input Capacitance C iss - 413 - Output Capacitance C oss - 76 - Reverse Transfer Capacitance C rss - 67 - pF VDS= 10V, VGS= 4.5V, f=1MHz. Total Gate Charge Q g - 6.2 - Gate-Source Charge Q gs - 1 - Gate-Drain Charge Q gd - 2 - nC VDS= 10V, VGS= 4.5V, ID= 4.2A. Turn-on Delay Time T d(on) - 6 - Rise Time T r - 19 - Turn-off Delay Time T d(off) - 47 - Fall Time T f - 67 - nS VDS= 10V, VGEN= 4.5V, RGEN=6Ω, RL=2.4Ω, ID=4.2A. Notes 1 Pulse test ：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not s ubject to production testing.

N-Channel Enhancement Mode Mos.FET 26-Oct-2012 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE

N-Channel Enhancement Mode Mos.FET 26-Oct-2012 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE