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Technical content

5.3A , 20V , RDS(ON) 32 m N-Channel Enhancement Mode MOSFET 8-Aug-2011 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H JF K E 1 2 RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(ON) and to ensure minimal power loss and heat dissipation.

FEATURES

 Low R DS(on) provides higher efficiency and extends battery life.  Low gate charge  Fast switch  Miniature SC-59 surface mount package saves board space. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage V GS ±12 V ID @ TA=25°C 5.3 A Continuous Drain Current 1 ID @ TA=70°C ID 4.3 A Pulsed Drain Current 2 IDM ±20 A Continuous Source Current (Diode Conduction) 1 I S 1.6 A PD @ TA=25°C 1.3 W Power Dissipation 1 PD @ TA=70°C PD 0.8 W Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Ratings t ≦ 5 sec 100 Maximum Junction to Ambient 1 Steady State RJA 166 °C / W Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. SC-59 A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50

5.3A , 20V , RDS(ON) 32 m N-Channel Enhancement Mode MOSFET 8-Aug-2011 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-Threshold Voltage V GS(th) 0.7 - 2 V V DS=VGS, ID=250uA Gate-Body Leakage I GSS - - ±100 nA V DS=0, VGS= ±8V - - 1 V DS=16V, VGS=0 Zero Gate Voltage Drain Current I DSS - - 10 uA VDS=16V, VGS=0, TJ=55°C On-State Drain Current 1 I D(on) 10 - - A V DS =5V, VGS=4.5V - - 32 V GS=4.5V, ID=4.6A Drain-Source On-Resistance 1 R DS(ON) - - 44 mΩ VGS=2.5V, ID=3.9A Forward Transconductance 1 g fs - 11.3 - S V DS=10V, ID=4A Diode Forward Voltage V SD - 0.75 - V I S=1.6A, VGS=0 Dynamic 2 Total Gate Charge Q g - 13.4 - Gate-Source Charge Q gs - 0.9 - Gate-Drain Charge Q gd - 2 - nC VDS=10V, VGS= 4.5V, ID=4A Turn-on Delay Time T d(on) - 8 - Rise Time T r - 24 - Turn-off Delay Time T d(off) - 35 - Fall Time T f - 10 - nS VDD=10V, VGEN=4.5V, RL=15Ω, ID=1A Notes: 1 Pulse test ：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not s ubject to production testing.

5.3A , 20V , RDS(ON) 32 m N-Channel Enhancement Mode MOSFET 8-Aug-2011 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE

5.3A , 20V , RDS(ON) 32 m N-Channel Enhancement Mode MOSFET 8-Aug-2011 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE