SMG2314 SECOS | Alldatasheet
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Marking : 2314 The SMG2314 utilized advanced processing techniques to achieve the lowest possible on-resistance, extemely efficient and cost-effectiveness device. The SMG2314 is universally used for all commercial-industrial applications. Absolute Maximum Ratings Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm SC-59 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual S G D B L A Top View H C J K Gate Source Drain 01-Jun-2002 Rev. A Page 1 of 4 * Low On-Resistance * Capable Of 2.5V Gate Drive D G S Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current Thermal Resistance Junction-ambient A V V A A ID@TA=70 /W C W / C C W VDS VGS ID@TA=25 IDM PD@TA=25 Tj, Tstg Rthj-a 3.5 2.8 1.38 0.01 -55~+150 o o o C o C o C o Max. 1,2 Parameter Symbol Ratings Unit Thermal Data Parameter Symbol Ratings Unit RoHS Compliant Product
Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) V V nA uA uA nC nS pF mΩ VGS=0V, ID=250uA VDS=VGS, ID=250uA Reference to 25 , ID=1m 370 C o 0.02 0.5 1.2 100 0.7 230 C o VGS=0V VDS=20V f=1.0MHz VDD=15V ID=1A VGS=5V RG=3.3 RD=15 Ω Ω ID=3A VDS=16V VGS=4.5V VGS=4.5V, ID=3.5A VGS= ±12V VDS=2 V,VGS=0 VDS=16V,VGS=0 Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf A Forward Transconductance Gfs S__ C o C o
7 VDS=5V, ID=3A
_ 125 VGS=2.5V, ID=1.2A Source-Drain Diode Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage VDS __ IS=1.2A, VGS=0V.V1.2 ΩGate Resistance Rg _ 1.71.1 f=1.0MHz o Reverse Recovery Time Reverse Recovery Change Trr Qrr __ 16 __ 8 nS nC IS=3A,VGS=0V dl/dt=100A/us 01-Jun-2002 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width 300us, dutycycle 2%.≦≦ 3.Surface mounted on FR4 board, t 10sec. Elektronische Bauelemente SMG2314 3.5A, 20V,RDS(ON)75m N-Channel Enhancement Mode Power Mos.FET Ω
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 Characteristics Curve Fig 5. Forward Char acteristics of Reverse Diode Fig 1. Typical Output Char acteristics Fig 4. Normalized On-Resistance v.s. Ju nction Temperature Fig 6. Gate Threshold Voltage v.s. Ju nction Temperature Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Elektronische Bauelemente SMG2314 3.5A, 20V,RDS(ON)75m N-Channel Enhancement Mode Power Mos.FET Ω
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Elektronische Bauelemente SMG2314 3.5A, 20V,RDS(ON)75m N-Channel Enhancement Mode Power Mos.FET Ω