SMG2313 SECOS | Alldatasheet

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  • Small Package Outline * Simple Drive Requirement Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS f12 V Continuous Drain Current3 ID @TA=25: -2.5 A Continuous Drain Current3 ID @TA=70: -1.97 A Pulsed Drain Current1 IDM 10 A Power Dissipation PD @TA=25: 1.38 W Linear Derating Factor 0.01 W/ Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient3 Max. Rthj-a 90 /W Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm SC-59 S G D B L A Top View H C J K Gate Source Drain D G S RoHS Compliant Product

Any changing of specification will not be informed individual http://www.SeCoSGmbH.com Elektronische Bauelemente 01-Jun-2002 Rev. A Page 2 of 4 SMG2313 -2.5 A,-20V,RDS(ON) 160m P-Channel Enhancement Mode Power Mos.FET Ω Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -20 - - V VGS=0, ID=-250uA Breakdown Voltage Temperature Coefficient æBVDSS /æTj - -0.01 - V/: Reference to 25:, ID=-1mA Gate Threshold Voltage VGS(th) - - -1.2 V VDS=VGS, ID=-250uA Forward Transconductance gfs - 4.0 - S VDS=-5V, ID=-2A Gate-Source Leakage Current IGSS - - D100 nA VGS= D12V Drain-Source Leakage Current(Tj=25:) - - -1 uA VDS=-20V, VGS=0 Drain-Source Leakage Current(Tj=70:) IDSS - - -25 uA VDS=-16V, VGS=0 - - 120 VGS=-10V, ID=-2.8A - - 160 VGS=-4.5V, ID=-2.5A Static Drain-Source On-Resistance2 RDS(ON) - - 300 mŁ VGS=-2.5V, ID=-2A Total Gate Charge2 Qg - 5 8 Gate-Source Charge Qgs - 1 - Gate-Drain (“Miller”) Change Qgd - 2 - nC ID=-2A VDS=-16V VGS=-4.5V Turn-on Delay Time2 Td(on) - 6 - Rise Time Tr - 17 - Turn-off Delay Time Td(off) - 16 - Fall Time Tf - 5 - ns VDS=-10V ID=-1A VGS=-10V RG=3.3Ł RD=10Ł Input Capacitance Ciss - 270 430 Output Capacitance Coss - 70 - Reverse Transfer Capacitance Crss - 55 - pF VGS=0V VDS=-20V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - -1.2 V IS=-1.2A, VGS=0V Reverse Recovery Time2 Trr - 20 - ns Reverse Recovery Charge Qrr - 15 - nC IS=-2A, VGS=0V dI/dt=100A/s Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2% . 3. Surface mounted on 1 in2 copper pad of FR4 board, t 10sec; 270 /W: when mounted on Min. copper pad.

Any changing of specification will not be informed individual http://www.SeCoSGmbH.com Elektronische Bauelemente 01-Jun-2002 Rev. A Page 3of 4 SMG2313 -2.5 A,-20V,RDS(ON) 160m P-Channel Enhancement Mode Power Mos.FET Ω Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode

Any changing of specification will not be informed individual http://www.SeCoSGmbH.com Elektronische Bauelemente 01-Jun-2002 Rev. A Page 4 of 4 SMG2313 -2.5 A,-20V,RDS(ON) 160m P-Channel Enhancement Mode Power Mos.FET Ω Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform