SMG2311B

SMG2311B VBSEMI | Alldatasheet

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FEATURES

• Isolated Package  High Voltage Isolation = 2.5 kV RMS (t = 60 s; f = 60 Hz)  Sink to Lead Creepage Distance = 4.8 mm  P-Channel  175 °C Operating Temperature  Dynamic dV/dt Rating  Low Thermal Resistance  Lead (Pb)-free Available Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). c. I SD ≤ - 6.7 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω)V GS = - 10 V 0.04 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S G D P-Channel MOSFET Available RoHS* COMPLIANT ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C ID - 5.2 ATC = 100 °C - 3.8 Pulsed Drain Currenta IDM - 21 Linear Derating Factor 0.18 W/°C Single Pulse Avalanche Energyb EAS 120 mJ Repetitive Avalanche Currenta IAR - 5.2 A Repetitive Avalanche Energya EAR 2.7 mJ Maximum Power Dissipation TC = 25 °C PD 27 W Peak Diode Recovery dV/dtc dV/dt - 4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in

1.1 N · m

G TO-236 (SOT-23) S D Top View SMG2311B www.VBsemi.com P-Channel 60-V (D-S) MOSFET g A ll data sheet.com

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -6 5 °C/W Maximum Junction-to-Case (Drain) RthJC -5 .5 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 60 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, I D = - 1 mA - - 0.060 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - - 2.5 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 60 V, VGS = 0 V - - - 100 µA VDS = - 48 VGS = 0 V, TJ = 150 °C - - - 500 Drain-Source On-State Resistance RDS(on) V GS = - 10 V I D = - 3.2 Ab - -0. Ω Forward Transconductance gfs VDS = - 25 V, ID = - 3.2 Ab 1.6 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 - 270 - pF Output Capacitance Coss - 170 - Reverse Transfer Capacitance Crss -3 1- Drain to Sink Capacitance C f = 1.0 MHz - 12 - Total Gate Charge Qg VGS = - 10 V ID = - 4.7 A, VDS = - 48 V, see fig. 6 and 13b -- 1 2 nC Gate-Source Charge Qgs -- 3 . 8 Gate-Drain Charge Qgd -- 5 . 1 Turn-On Delay Time td(on) VDD = - 30 V, ID = - 4.7 A, RG = 24 Ω, RD= 4.0 Ω, see fig. 10b -1 1- ns Rise Time tr -6 3- Turn-Off Delay Time td(off) -9 .6 - Fall Time tf -3 1- Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4 . 5- nH Internal Source Inductance L S -7 . 5- Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S MOSFET symbol showing the integral reverse p - n junction diode -- - 5 . 2 A Pulsed Diode Forward Current a ISM -- - 2 1 Body Diode Voltage VSD TJ = 25 °C, IS = - 5.2 A, VGS = 0 Vb -- - 5 .5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = - 4.7 A, dI/dt = 100 A/µsb - 80 160 ns Body Diode Reverse Recovery Charge Q rr - 0.096 0.19 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G SMG2311B www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC= 25 °C Fig. 2 - Typical Output Characteristics, TC= 175 °C Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature SMG2311B www.VBsemi.com g A ll data sheet.com

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diod e Forward Voltage Fig. 8 - Maximum Safe Operating Area SMG2311B www.VBsemi.com g A ll data sheet.com

Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Ther mal Impedance, Junction-to-Case Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS RG D.U.T. - 10 V VDS VDD VGS 10 % 90 % VDS td(on) tr td(off) tf R G IAS 0.01 Ωtp D.U.T. L VDS +- VDD - 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp SMG2311B www.VBsemi.com g A ll data sheet.com

Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit QGS QGD QG VG Charge - 10 V D.U.T. - 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. SMG2311B www.VBsemi.com g A ll data sheet.com

Fig. 14 - For P-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = - 10 V* VDD ISD Driver gate drive D.U.T. ISD waveform D.U.T. VDS waveform Inductor current D = P.W. Period - - + * VGS = - 5 V for logic level and - 3 V drive devices Peak Diode Recovery dV/dt Test Circuit VDD

• dV/dt controlled by RG
• ISD controlled by duty factor "D"
• D.U.T. - device under test D.U.T. Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance current transformer RG Compliment N-Channel of D.U.T. for driver SMG2311B www.VBsemi.com g A ll data sheet.com

SOT-23 (TO-236): 3-LEAD b EE1 S e D A2A A1 C Seating Plane 0.10 mm 0.004" C C L q Gauge Plane Seating Plane 0.25 mm Dim MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 0.055 e 0.95 BSC 0.0374 Ref e1 1.90 BSC 0.0748 Ref L 0.40 0.60 0.016 0.024 L1 0.64 Ref 0.025 Ref S 0.50 Ref 0.020 Ref q 3°8 ° 3°8 ° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 SMG2311B www.VBsemi.com g A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SOT-23 0.106 (2.692) Recommended Minimum Pads Dimensions in Inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) SMG2311B www.VBsemi.com g A ll data sheet.com

All products due to improve reliabi lity, function or design or for other reasons, product specifications and data are subject to change withou t notice. Taiwan VBsemi Electronics Co., Ltd. , branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in th e table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, re presentation or warranty on the product for any particular purpose of any goods or continuous producti on. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any applicati on and all liability arising out of or use of any products; (2) any and all liability, including but not limited to spe cial, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of app lications are based on knowledge of the product is often used in a typical application of the general produc t VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particul ar application is non-binding. It is the customer's responsibility to verify specific product features in the products de scribed in the specification is appropriate for use in a particular application. Parameter data sheets and techni cal specifications can be provided may vary depending on the application and performance over time. All operati ng parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and condi tions, including but not limited to warranty herein. Unless expressly stated in writi ng, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining application s or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of prod ucts used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorize d Taiwan VBsemi people who are related to product design applications and other terms and conditions in wr iting. The information provided in this d ocument and the company's products without a license, express or implied, by estoppel or otherwise, to any i ntellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to here in are trademarks of their respective representatives will be all. MaterialCategoryPolicy Taiwan VBsemi Electronics Co., Ltd ., hereby certify that all of the products are determined to be RoHS compliant and meets the defin ition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronicequipment(EEE)-modific ation,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) Pleasenotethatsomedocumentsma ystillrefertoTaiwanVBsemiRoHSDirective2002/95/EC.We confirm that all products identifie d as consistent with the Directive 2002/95 / EC European Directive 2011/65/. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standard s required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the d efinition of IEC 61249-2-21, and we are sure that all products conformtoconfirmcompliancewithI EC61249-2-21standardlevelJS709A. SMG2311B www.VBsemi.com A ll data sheet.com