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2.2A, 30V , RDS(ON) 65 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 11-Feb-2011 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H JF K E 1 2 RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low gate charge Fast switch
PACKAGE INFORMATION
SC-59 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage V GS ±8 V Continuous Drain Current 1 ID @ TA=25°C ID 2.2 A ID @ TA=70°C1 . 7 A Pulsed Drain Current 2 IDM 10 A Continuous Source Current (Diode Conduction) 1 I S 0.45 A Power Dissipation 1 PD @ TA=25°C PD 0.5 W PD @ TA=70°C0 . 4 2 W Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ 150 °C Thermal Resistance Ratings Maximum Junction to Ambient 1 t ≦ 5 sec RJA 250 °C / W Steady State 285 Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. SC-59 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50
2.2A, 30V , RDS(ON) 65 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 11-Feb-2011 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Switch Off Characteristics Drain-Source Breakdown Voltage V (BR)DSS 30 - - V GS=0, ID=250μA Gate-Body Leakage I GSS - - ±100 nA V DS=0, VGS= ±8V Zero Gate Voltage Drain Current I DSS - - 1 μA VDS=24V, VGS=0 - - 10 V DS=24V, VGS=0, TJ=55°C Switch On Characteristics Gate-Threshold Voltage V GS(th) 0.43 0.7 1 V V DS=VGS, ID=250μA On-State Drain Current 1 I D(on) 10 - - A V DS=5V, VGS=4.5V Drain-Source On-Resistance 1 R DS(ON) - 54 65 mΩ VGS=4.5V, ID=2.2A - 80 99 V GS=4.5V, ID=2.2A, TJ=55°C - 70 82 V GS=2.5V, ID=2A Forward Transconductance 1 g fs - 13 - S V DS=5V, ID=2.2A Diode Forward Voltage V SD - 0.65 1.2 V I S=0.45A, VGS=0 Dynamic 2 Total Gate Charge Q g - 7 9 nC VDS=10V, VGS=4.5V, ID= 2.2A Gate-Source Charge Q gs - 1.1 - Gate-Drain Charge Q gd - 1.9 - Switching Turn-on Delay Time T d(on) - 4 11 nS VDS=10V, VGEN=4.5V, RG=6, ID=1A Rise Time T r - 11 19 Turn-off Delay Time T d(off) - 18 30 Fall Time T f - 5 10 Notes: 1 Pulse test ：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not s ubject to production testing.
2.2A, 30V , RDS(ON) 65 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 11-Feb-2011 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE
2.2A, 30V , RDS(ON) 65 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 11-Feb-2011 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE