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http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SMG2310B 2.3A , 60V , R DS(ON) 100 m N-Channel Enhancement Mode MOSFET 30-Jul-2013 Rev. B Page 1 of 4 Top View A L C B D G H JF K E 1 2 SC-59 TOP VIEW RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SMG2310B utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2310B is universally used for all commercial-industrial applications.
FEATURES
Simple Drive Requirement Small Package Outline MARKING 2310B
PACKAGE INFORMATION
ABSOLUTE MAXIMUM RATINGS ( TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage V GS ±20 V TA=25°C 2.3 Continuous Drain Current 1 , VGS@10V TA=70°C ID 1.8 A Pulsed Drain Current 2 IDM 9.2 A Power Dissipation 3 T A=25°C P D 1 W Operating Junction and Storage Temperature Range Tj, Tstg -55~150 °C Thermal Resistance Rating Maximum Junction to Ambient 1 R θJA 125 °C / W A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SMG2310B 2.3A , 60V , R DS(ON) 100 m N-Channel Enhancement Mode MOSFET 30-Jul-2013 Rev. B Page 2 of 4 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS 60 - - V V GS=0, ID=250μA Breakdown Voltage Temperature BV △ DSS/T j△ - 0.054 - V/°C Reference to 25°C, I D=1mA Gate-Threshold Voltage V GS(th) 1 - 2.5 V V DS=VGS, ID=250μA Forward Transconductance g fs - 13 - S V DS =5V, ID =2A Gate-Body Leakage Current I GSS - - ±100 nA V GS=±20V TJ=25°C - - 1 V DS=48V, VGS=0 Drain-Source Leakage Current TJ=55°C IDSS - - 5 μA VDS=48V, VGS=0 - - 100 V GS=10V, ID=2.3A Drain-Source On-Resistance R DS(ON) - - 110 mΩ VGS=4.5V, ID=2.2A Total Gate Charge 2 Q g - 5 - Gate-Source Charge Q gs - 1.68 - Gate-Drain (‘’Miller’’)Charge Q gd - 1.9 - nC VDS=48V, VGS=4.5V, ID=2A Turn-on Delay Time 2 T d(on) - 1.6 - Rise Time T r - 7.2 - Turn-off Delay Time T d(off) - 25 - Fall Time T f - 14.4 - nS VDS=30V, VGS=10V, RG=3.3Ω, RD=30Ω, ID=2A Input Capacitance Ciss - 511 - Output Capacitance Coss - 38 - Reverse Transfer Capacitance Crss - 25 - pF VGS=0, VDS=15V, f=1.0MHz Source-Drain Diode Diode Forward Voltage2 V SD - - 1.2 V I S=1A, VGS=0 Continuous Source Current1.4 I S - - 2.3 Pulsed Source Current2.4 I SM - - 9.2 A V G=VD=0, Force Current Reverse Recovery Time T RR - 9.7 - nS Reverse Recovery Charge Q RR - 5.8 - nC IF=2A, dI/dt=100A/μs VGS=0 Notes: 1. Surface mounted on a 1 inch2 FR-4 board with 2OZ copper. ;270°C / W when mounted on min. copper pad. 2. The data tested by pulsed , pulse width ≦300μs, duty cycle≦2% 3. The power dissipation is limited by 150 °C junction temperature 4. The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SMG2310B 2.3A , 60V , R DS(ON) 100 m N-Channel Enhancement Mode MOSFET 30-Jul-2013 Rev. B Page 3 of 4 CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SMG2310B 2.3A , 60V , R DS(ON) 100 m N-Channel Enhancement Mode MOSFET 30-Jul-2013 Rev. B Page 4 of 4 CHARACTERISTIC CURVES