SMG2310A SECOS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
N-Ch Enhancement Mode Power MOSFET
5.0 A, 60 V , RDS(ON) =115 mΩ
24-Nov-2009 Rev. A Page 1 of 3 sRoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SMG2310A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2310A is universally used for all commercial-industrial applications.
FEATURES
/circle6 Simple Drive Requirement, /circle6 Small Package Outline /circle6 Super High Density Cell Design for Extremely Low R DS(ON) MARKING CODE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 3 ID @T A=25° C 5.0 A Continuous Drain Current3 ID @T A=70° C 4.0 A Pulsed Drain Current 1,2 IDM 10 A Power Dissipation PD @T A=25° C 1.38 W Linear Derating Factor 0.01 W/° C Operating Junction & Storage Temperature Range TJ, T STG -55 ~ +150 ° C THERMAL DATA Thermal Resistance Junction-ambient 3 Max R θJA 90 ° C /W
ELECTRICAL CHARACTERISTICS
(Tj = 25 °C unless otherwise specified) PARAMETER SYMBOL MIN. TYP . MAX. UNIT TEST CONDITIONS Drain-Source Breakdown Voltage BV DSS 60 - - V V GS = 0, I D = 250 µA Gate Threshold Voltage V GS(th) 0.5 - 1.5 V V DS = VGS , ID = 250 µA Forward Transconductance g fs - 12 - S V DS = 15V, I D = 4A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V Drain-Source Leakage Current(Tj=25° C) - - 1 µA V DS = 60V, V GS = 0 Drain-Source Leakage Current(Tj=55° C) IDSS - - 10 µA V DS = 60V, V GS = 0 - - 115 V GS = 10 V, I D = 5.0 A Static Drain-Source On-Resistance R DS(ON) - - 125 m Ω VGS = 4.5 V, I D = 4.5 A Total Gate Charge 2 Q g - 4.0 - Gate-Source Charge Q gs - 1.2 - Gate-Drain (“Miller”) Charge Q gd - 1.0 - nC ID = 4A VDS = 30V VGS = 4.5V Turn-on Delay Time 2 T d(on) - 6 - Rise Time Tr - 12 - Turn-off Delay Time T d(off) - 18 - Fall Time Tf - 10 - ns VDD = 30V R G = 6 Ω ID = 2.5A, VGS = 10 V R L =12 Ω Input Capacitance C iss - 320 - Output Capacitance C oss - 42 - Reverse Transfer Capacitance C rss - 20 - pF VGS = 0 V VDS = 30V f = 1.0MHz SOURCE-DRAIN DIODE Forward On Voltage 2 V SD - - 1.2 V I S = 2.5 A, V GS = 0V Notes: 1. Pulse width limited by Max. Junction Temperature. 2. Pulse width ≦300 µs, duty cycle ≦2%. 3. Surface mounted on 1 in 2 copper pad of FR4 board; 270° C/W when mounted on Min. copper pad. Top View A L C B D G H JF K E 1 2 A 2.70 3.10 G 0.10 REF. B 2. 25 3.00 H 0.40 REF. C 1.3 0 1. 70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50 SC-59 Gate Source Drain N-Channel 2310A G S D
N-Ch Enhancement Mode Power MOSFET 24-Nov-2009 Rev. A Page 2 of 3 CHARACTERISTIC CURVE
N-Ch Enhancement Mode Power MOSFET 24-Nov-2009 Rev. A Page 3 of 3 CHARACTERISTIC CURVE