SMG2309

SMG2309 SECOS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Features

• Simple drive requirement * Small package outline Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Parameter Symbol Ratings Unit Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient A V V A A ID@TA=70 /W C W / C C W VDS VGS ID@TA=25 IDM PD@TA=25 Tj, Tstg Rthj-a -30 ±20 -12 -3.7 -3.0 1.38 0.01 -55~+150 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm SC-59 o o o C o C o C o 3 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Thermal Data S G D B L A Top View H C J K Gate Source Drain D G S and cost-effectiveness. Marking : 2309 * Power Management in Notebook Computer

Applications

• Protable Equipment * Battery Powered System voltage applications such as DC/DC converters. The SMG2309 is universally preferred for all commercial industrial surface mount application and suited for low 01-Jun-2002 Rev. A Page 1 of 4 RoHS Compliant Product

-3.7A, -30V,RDS(ON) 75m P-Channel Enhancement Mode Power Mos.FET E l e c t r i c a l C h a r a c t e r i s t i c s ( T j = 2 5 C U n l e s s o t h e r w i s e s p e c i f i e d ) T o t a l G a t e C h a r g e P a r a m e t e r S y m b ol M a x .T y p . T e s t C o n d i t i o nM i n . U n i t D r a i n - S o u r c e B r e a k d o w n V o l t a g e B r e a k d o w n V o l t a g e T e m p . C o e f f i c i e n t G a t e T h r e s h o l d V o l t a g e G a t e - S o u r c e L e a k a g e C u r r e n t D r a i n - S o u r c e L e a k a g e C u r r e n t ( T j = 2 5 ) S t a t i c D r a i n - S o u r c e O n - R e s i s t a n c e D r a i n - S o u r c e L e a k a g e C u r r e n t ( T j = 7 0 ) G a t e - S o u r c e C h a r g e G a t e - D r a i n ( " M i l l e r " ) C h a r g e T u r n - o n D e l a y T i m e R i s e T i m e T u r n - o f f D e l a y T i m e F a l l T i m e I n p u t C a p a c i t a n c e O u t p u t C a p a c i t a n c e R e v e r s e T r a n s f e r C a p a c i t a n c e B VD S S B VD S/ T j VG S ( t h ) IG S S ID S S C r s s Q g Q g s Q g d T d( O N ) T d( O f f ) T r C i s s C o s s Tf - 3 0 - 0 . 0 2 - 1 . 0 1 0 0 - 1 - 2 5 7 5 1 2 0 2 0 4 1 2 9 1 V V n A u A u A m n C n S p F Ω VG S= 0 V VD S= - 2 5 V f = 1 . 0 M H z VD S= - 1 5 V ID= - 1 A VG S= - 1 0 V RG= 3 . 3 RD= 1 5 Ω Ω ID= - 3 A VD S= - 2 4 V VG S= - 4 . 5 V VG S= - 1 0 V , ID= - 3 A VG S= - 4 . 5 V , ID= - 2 . 6 A VG S= 0 V , ID= - 2 5 0 u A VG S= 2 0V± VD S= - 3 0 V , VG S= 0 VD S= - 2 4 V , VG S= 0 VD S= VG S , ID= - 2 5 0 u A R e f e r e n c e t o 2 5 , ID= -1 m A S o u r c e - D r a i n D i o d e P a r a m e t e r S y m b ol M a x .T y p . T e s t C o n d i t i o nM i n . U n i t F o r w a r d O n V o l t a g e R e v e r s e R e c o v e r y T i m e VS D T r r _ _ IS=-1 . 2A, VG S= 0 V . I s = 3 . 0 A , VG S= 0 V n S -1 . 2 2 0 N o t e s : 1 . P u l s e w i d t h l i m i t e d b y M a x . j u n c t i o n t e m p e r a t u r e . 2 . P u l s e w i d t h 3 0 0 u s , d u t y c y c l e 2 % .≦≦ 3 . S u r f a c e m o u n t e d o n 1 i n c h2 c o p p e r p a d o f F R 4 b o a r d ; 2 7 0 w h e n m o u n t e d o n m i n . c o p p e r p a d .°C / W F o r w a r d T r a n s c o n d u c t a n c e G f s S5 . 0 VD S= - 1 0 V , ID= - 3 A_ 6 6 0 _R e v e r s e R e c o v e r y C h a r g e Q r r 1 5 n C_ - 3 . 0 d l / d t = 1 0 0 A / u S o Co Co Co Co RD S ( O N ) http://www. SeCoS GmbH. com / Any ch anging of sp eci fication wi l l n ot be informe d in divid u a l Ω 01-Jun-2002 Rev. A Page 2 of 4

-3.7A, -30V,RDS(ON) 75m P-Channel Enhancement Mode Power Mos.FET Ω Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode 01-Jun-2002 Rev. A Page 3 of 4 Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

-3.7A, -30V,RDS(ON) 75m P-Channel Enhancement Mode Power Mos.FET Ω Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 01-Jun-2002 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual