SMG2307PE_15 SECOS | Alldatasheet

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Technical content

-5.2 A, -20 V , R DS(ON) 31 mΩΩ ΩΩ P-Channel Enhancement MOSFET Elektronische Bauelemente 22-Oct-2012 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SC -59 Top View A L C B D G H JF K E 1 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low R DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES

/circle6 Low R DS(on) provides higher efficiency and extends battery life. /circle6 Low thermal impedance copper leadframe SC-59 saves board space. /circle6 Fast switching speed. /circle6 High performance trench technology.

PACKAGE INFORMATION

SC-59 3K 7’ inch MAXIMUM RATINGS (T A = 25 °C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±10 V Continuous Drain Current 1 TA=25° C ID -5.2 A TA=70° C -4.3 Pulsed Drain Current 2 IDM -20 A Continuous Source Current (Diode Conduction) 1 I S -1.9 A Power Dissipation 1 TA=25° C PD 1.3 W TA=70° C 0.8 Operating Junction and Storage Temperature Range TJ, T STG -55 ~ 150 ° C Thermal Resistance Data Maximum Junction to Ambient 1 t ≦ 10 sec R θJA 100 ° C/W Steady-State 166 Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50

-5.2 A, -20 V , R DS(ON) 31 mΩΩ ΩΩ P-Channel Enhancement MOSFET Elektronische Bauelemente 22-Oct-2012 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T A=25° C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Conditions Static Gate-Threshold Voltage V GS(th) -0.3 -0.55 - V V DS = V GS , I D = -250 µA Gate-Body Leakage I GSS - - ±10 µA V DS = 0V, VGS = ±10V Zero Gate Voltage Drain Current I DSS - - -1 µA VDS = -16V, VGS = 0V - - -10 VDS = -16V, VGS = 0V, TJ=55° C On-State Drain Current 1 I D(ON) -10 - - A V DS = -5V, VGS = -4.5V Drain-Source On-Resistance 1 R DS(ON) - - 31 m Ω VGS = -4.5V, I D = -4.2A Forward Transconductance 1 g FS - 20 - S V DS = -10V, ,ID = -4.2A Diode Forward Voltage V SD - -0.7 - V I S= -0.95A, VGS =0 Dynamic 2 Input Capacitance C iss - 826 - pF VDS = -15V VGS =0 f=1MHz Output Capacitance C oss - 96 - Reverse Transfer Capacitance C rss - 46 - Total Gate Charge Q g - 18 - nC ID = -4.2A VDS = -10V VGS = -4.5V Gate-Source Charge Q gs - 4.8 - Gate-Drain Charge Q gd - 3.1 - Turn-On Delay Time Td (ON) - 81 - nS ID = -4.2A, R L=2.4 Ω VDS = -10V VGEN = -4.5V R GEN = 6Ω Rise Time Tr - 163 - Turn-Off Delay Time Td (OFF) - 785 - Fall Time Tf - 397 - Notes: 1. Pulse test ：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing.

-5.2 A, -20 V , R DS(ON) 31 mΩΩ ΩΩ P-Channel Enhancement MOSFET Elektronische Bauelemente 22-Oct-2012 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE

-5.2 A, -20 V , R DS(ON) 31 mΩΩ ΩΩ P-Channel Enhancement MOSFET Elektronische Bauelemente 22-Oct-2012 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE