SMG2306A-C SECOS | Alldatasheet
Document overview
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Technical content
5A, 30V , R DS(ON) 35mΩ N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 25-May-2017 Rev. C Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H JF K E 1 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMG2306A-C utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2306A-C is universally used for all commercial-industrial applications.
FEATURES
/circle6 Capable of 2.5V Gate Drive /circle6 Lower On-Resistance MARKING
PACKAGE INFORMATION
Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Drain Current 3, @V GS =4.5V TA=25° C ID 5 A TA=70° C ID 4 A Pulsed Drain Current 1 IDM 20 A Power Dissipation T A=25° C P D 1.38 W Linear Derating Factor 0.01 W/° C Operating Junction and Storage Temperature Range Tj, Tstg -55~150 ° C Thermal Data Thermal Resistance Junction-ambient 3 Max. R θJA 90 ° C/W Part Number Type SMG2306A-C Lead (Pb)-free and Halogen-free SC-59 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0.10 REF. B 2.10 3.00 H 0.40 REF. C 1.20 1.70 J 0.047 0.207 D 0.89 1.40 K 0.5 REF. E 2.00 Typ. L 0.95 REF. F 0.30 0.50
5A, 30V , R DS(ON) 35mΩ N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 25-May-2017 Rev. C Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS 30 - - V V GS =0, I D =250uA Breakdown Voltage Temperature Coefficient △BV DSS /△TJ - 0.1 - V/° C Reference to 25° C, I D =1mA Gate Threshold Voltage V GS(th) 0.5 - 1.2 V V DS =V GS , I D =250uA Forward Transconductance g fs - 13 - S V DS =5V, ID =5A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±12V Drain-Source Leakage Current T J=25° C IDSS - - 1 uA V DS =30V, V GS =0 TJ=70° C - - 25 uA V DS =24V, V GS =0 Static Drain-Source On-Resistance RDS(ON) - - 30 m Ω VGS =10V, I D =5A - - 35 V GS =4.5V, I D =5A - - 50 V GS =2.5V, I D =2.6A - - 90 V GS =1.8V, I D =1.0A Total Gate Charge 2 Q g - 8.5 15 nC ID =5A VDS =16V VGS =4.5V Gate-Source Charge Q gs - 1.5 - Gate-Drain (“Miller”) Change Q gd - 3.2 - Turn-on Delay Time 2 T d(on) - 6 - nS VDS =15V ID =5A VGS =10V R G =3.3 Ω R D =3 Ω Rise Time T r - 20 - Turn-off Delay Time T d(off) - 20 - Fall Time T f - 3 - Input Capacitance C iss - 660 1050 pF VGS =0 VDS =25V f=1.0MHz Output Capacitance C oss - 90 - Reverse Transfer Capacitance C rss - 70 - Source-Drain Diode Forward on Voltage 2 V SD - - 1.2 V I S=1.2A, VGS =0 Reverse Recovery Time 2 T rr - 14 - nS IS=5A, V GS =0 dI/dt=100A/us Reverse Recovery Charge Q rr - 7 - nC Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 3≦ 00µs, duty cycle 2%.≦ 3. Surface mounted on 1 in 2 copper pad of FR4 board; 270° C/W when mounted on Min. copper pad.
5A, 30V , R DS(ON) 35mΩ N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 25-May-2017 Rev. C Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE
5A, 30V , R DS(ON) 35mΩ N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 25-May-2017 Rev. C Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE