SMG2306

SMG2306 SECOS | Alldatasheet

Document overview

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Technical content

Features

• Capable of 2.5V gate drive * Lower on-resistance Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Parameter Symbol Ratings Unit Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient A V V A A ID@TA=70 /W C W / C C W VDS VGS ID@TA=25 IDM PD@TA=25 Tj, Tstg Rthj-a ±12 5.3 4.3 1.38 0.01 -55~+150 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm SC-59 o o o C o Co Co http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual S G D B L A Top View H C J K Gate Source Drain D G S Marking : 2306 * Power Management in Notebook Computer

Applications

• Protable Equipment * Battery Powered System efficient and cost-effectiveness device. to achieve the lowest possible on-resistance, extremely The SMG2306 utilized advanced processing techniques * Reliable and Rugged 01-Jun-2002 Rev. A Page 1 of 4 RoHS Compliant Product

5.3A, 20V,RDS(ON) 32m N-Channel Enhancement Mode Power Mos.FET E l e c t r i c a l C h a r a c t e r i s t i c s ( T j = 2 5 C U n l e s s o t h e r w i s e s p e c i f i e d ) T o t a l G a t e C h a r g e RD S ( O N ) http://www. SeCoS GmbH. com / Any ch anging of sp eci fication wi l l n ot be informe d in divid u a l P a r a m e t e r S y m b ol M a x .T y p . T e s t C o n d i t i o nM i n . U n i t D r a i n - S o u r c e B r e a k d o w n V o l t a g e B r e a k d o w n V o l t a g e T e m p . C o e f f i c i e n t G a t e T h r e s h o l d V o l t a g e G a t e - S o u r c e L e a k a g e C u r r e n t D r a i n - S o u r c e L e a k a g e C u r r e n t ( T j = 2 5 ) S t a t i c D r a i n - S o u r c e O n - R e s i s t a n c e D r a i n - S o u r c e L e a k a g e C u r r e n t ( T j = 7 0 ) G a t e - S o u r c e C h a r g e G a t e - D r a i n ( " M i l l e r " ) C h a r g e T u r n - o n D e l a y T i m e R i s e T i m e T u r n - o f f D e l a y T i m e F a l l T i m e I n p u t C a p a c i t a n c e O u t p u t C a p a c i t a n c e R e v e r s e T r a n s f e r C a p a c i t a n c e B VD S S B VD S/ T j VG S ( t h ) IG S S ID S S C r s s Q g Q g s Q g d T d( O N ) T d( O f f ) T r C i s s C o s s Tf 2 0 0 . 1 0 . 5 1 0 0 1 0 3 0 3 5 8 . 7 1 . 5 3 . 6 1 4 1 8 . 4 2 . 8 6 0 3 1 4 4 1 1 1 V V n A u A u A m n C n S p F Ω VG S= 0 V VD S= 1 5 V f = 1 . 0 M H z VD S= 1 5 V ID= 1 A VG S= 1 0 V RG= 2 RD= 1 5 Ω Ω ID= 5 . 3 A VD S= 1 0 V VG S= 4 . 5 V VG S= 1 0 V , ID= 5 . 5 A VG S= 4 . 5 V , ID= 5 . 3 A VG S= 0 V , ID= 2 5 0 u A VG S= 1 2V± VD S= 2 0 V , VG S= 0 VD S= 1 6 V , VG S= 0 VD S= VG S , ID= 2 5 0 u A R e f e r e n c e t o 2 5 , ID=1 m A S o u r c e - D r a i n D i o d e P a r a m e t e r S y m b ol M a x .T y p . T e s t C o n d i t i o nM i n . U n i t F o r w a r d O n V o l t a g e R e v e r s e R e c o v e r y T i m e VS D T r r IS= 1 . 2 A, VG S= 0 V . I s =5A , VG S= 0 V V n S 1 . 2 1 6 . 8 N o t e s : 1 . P u l s e w i d t h l i m i t e d b y M a x . j u n c t i o n t e m p e r a t u r e . 2 . P u l s e w i d t h 3 0 0 u s , d u t y c y c l e 2 % . 3 . S u r f a c e m o u n t e d o n 1 i n c h2 c o p p e r p a d o f F R 4 b o a r d ; 2 7 0 w h e n m o u n t e d o n m i n . c o p p e r p a d .°C / W F o r w a r d T r a n s c o n d u c t a n c e G f s S1 3 VD S= 5 V , ID= 5 . 3 A_ 5 0 _R e v e r s e R e c o v e r y C h a r g e Q r r 1 1 n C_ 1 . 2 9 0 _ VG S= 2 . 5 V , ID=2 . 6A VG S= 1 .8V , ID= 1 A d l / d t = 1 0 0 A / u S o Co C o Co Co Ω 01-Jun-2002 Rev. A Page 2 of 4

5.3A, 20V,R DS(ON) 32m N-Channel Enhancement Mode Power Mos.FET Ω 01-Jun-2002 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Characteristics Curve

5.3A, 20V,RDS(ON) 32m N-Channel Enhancement Mode Power Mos.FET Ω 01 -Jun-2002 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual