SMG2305A-C SECOS | Alldatasheet
Document overview
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Technical content
-4.2A, -30V , R DS(ON) 60m Ω P-Channel Enhancement MOSFET Elektronische Bauelemente 25-May-2017 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SC -59 Top View A L C B D G H JF K E 1 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMG2305A-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent R DS(ON) and gate charge for most of the small power switching and load switch applications. The SMG2305A-C meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
/circle6 Advanced High Cell Density Trench Technology /circle6 Super Low Gate Charge MARKING 2305A
PACKAGE INFORMATION
≦10sec Steady State Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Drain Current 1, @VGS= -10V TA=25° C ID -4.2 -3.7 A TA=70° C -3.5 -3 Pulsed Drain Current 3 IDM -30 A Power Dissipation T A=25° C PD 1.4 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Resistance Data Thermal Resistance Junction-Ambient 1 R θJA ≦10sec, 90 ° C/W Steady State, 125 Thermal Resistance Junction-Ambient 2 270 Thermal Resistance Junction-Case 1 R θJC 80 Part Number Type SMG2305A-C Lead (Pb)-free and Halogen-free REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0.10 REF. B 2.10 3.00 H 0.40 REF. C 1.20 1.70 J 0.047 0.207 D 0.89 1.40 K 0.5 REF. E 2.00 Typ. L 0.95 REF. F 0.30 0.50
-4.2A, -30V , R DS(ON) 60m Ω P-Channel Enhancement MOSFET Elektronische Bauelemente 25-May-2017 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T J=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS -30 - - V V GS =0, I D = -250 µA Gate Threshold Voltage V GS(th) -0.5 - -1.2 V V DS =V GS , I D = -250 µA Forward Transconductance g fs - 5.6 - S V DS = -5V, ,ID = -3A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±12V Drain-Source Leakage Current T J=25° C IDSS - - -1 µA VDS = -24V, VGS =0 TJ=55° C - - -5 V DS = -24V, VGS =0 Drain-Source On-Resistance 4 R DS(ON) - - 60 m Ω VGS = -10V, I D = -3.2A Total Gate Charge Q g - 11.9 - nC ID = -3A VDS = -15V VGS = -4.5V Gate-Source Charge Q gs - 1.8 - Gate-Drain (“Miller”) Charge Q gd - 3 - Turn-on Delay Time T d(on) - 6.6 - nS VDD = -15V VGS = -4.5V ID = -3A R G =3.3 Ω R L=5Ω Rise Time T r - 27.8 - Turn-off Delay Time T d(off) - 46.2 - Fall Time T f - 20.6 - Input Capacitance C iss - 920 - pF VGS =0 VDS = -15V f=1MHz Output Capacitance C oss - 73 - Reverse Transfer Capacitance C rss - 71 - Source-Drain Diode Forward on Voltage 4 V SD - - -1.2 V I S= -1.2A, VGS =0 Continuous Source Current 1 I S - - -3.7 A Pulsed Source Current 3 I SM - - -15 Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. When mounted on Min. copper pad. 3. Pulse width limited by maximum junction temperature. 4. The data tested by pulsed, pulse width ≦300µs, duty cycle ≦2%.
-4.2A, -30V , R DS(ON) 60m Ω P-Channel Enhancement MOSFET Elektronische Bauelemente 25-May-2017 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE
-4.2A, -30V , R DS(ON) 60m Ω P-Channel Enhancement MOSFET Elektronische Bauelemente 25-May-2017 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE