SMG2304A

SMG2304A SECOS | Alldatasheet

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• Small Package Outline * Simple Drive Requirment The SMG2304A utilized advanced processing techniques to achieve the lowest possible on- resistance, extremely efficient and cost- effectiveness device. The SMG2304A is universally used for all commercial-industrial applications. Marking : 2304A Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V @10V 2.5 2.0Continuous Drain Current, VGS Pulsed Drain Current Parameter Symbol Ratings Unit Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient A V V A A ID@TA=70 /W C W / C C W VDS VGS ID@TA=25 IDM PD@TA=25 Tj, Tstg Rthj-a ±20 1.38 0.01 -55~+150 o o o C o C o C o Max. Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm SC-59 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual S G D B L A Top View H C J K Gate Source Drain D G S 01-Jun-2002 Rev. A Page 1 of 4 RoHS Compliant Product

Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 0.1 1.0 100 117 190 0.8 1.8 120 V V nA uA uA m nC nS pF Ω VGS=0V VDS=25V f=1.0MHz VDS=15V ID=1A VGS=10V RG=3.3 RD=15 Ω Ω ID=2.5A VDS=24V VGS=4.5V VGS=10V, ID=2.5A VGS=4.5V, ID=2A VGS=0V, ID=250uA VGS=±20V VDS=30V,VGS=0 VDS=24V,VGS=0 VDS=VGS, ID=250uA Reference to 25 , ID=1mA Source-Drain Diode Notes: 1.Pulse width limited by Max. junction temperature. Forward Transconductance Gfs S2 VDS=10V, ID=2.5A_ 190 3.0 o C o C o C o Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage Reverse Recovery Time VSD Trr IS=1.2A, VGS=0V. Is=2A,VGS=0V V nS 1.2 _Reverse Recovery Charge Qrr 23 nC_ dl/dt=100A/uS Gate Resistance Rg 1.67 __ f=1.0MHzΩ http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 2.Pulse width 300us, dutycycle 2%.≦≦ 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270 when mounted on min. copper pad.°C/W 01-Jun-2002 Rev. A Page 2 of 4 Elektronische Bauelemente SMG2304A 2.5A, 30V,RDS(ON) 117m N-Channel Enhancement Mode Power Mos.FET Ω

01-Jun-2002 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Elektronische Bauelemente SMG2304A 2.5A, 30V,RDS(ON) 117m N-Channel Enhancement Mode Power Mos.FET Ω Characteristics Curve Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature

01-Jun-2002 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Elektronische Bauelemente SMG2304A 2.5A, 30V,RDS(ON) 117m N-Channel Enhancement Mode Power Mos.FET Ω Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform