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3.4 A, 20 V , RDS(ON) 76 m

N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 11-Feb-2011 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper lead frame SC-59 saves board space.  Fast switching speed.  High performance trench technology. Application DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

SC-59 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage V GS ±8 V Continuous Drain Current 1 ID @ TA=25°C ID 3.4 A ID @ TA=70°C2 . 2 A Pulsed Drain Current 2 IDM 10 A Continuous Source Current (Diode Conduction) 1 I S 1.6 A Power Dissipation 1 PD @ TA=25°C PD 1.25 W PD @ TA=70°C0 . 8 W Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ 150 °C Thermal Resistance Ratings Maximum Junction to Ambient 1 t ≦ 5 sec RJA 100 °C / W Steady State 166 Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. Top View A L C B D G H JF K E 1 2 SC-59 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50

N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 11-Feb-2011 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-Threshold Voltage V GS(th) 0.7 0.8 1.2 V V DS=VGS, ID=250μA Gate-Body Leakage I GSS - - 100 nA V DS=0, VGS=8V Zero Gate Voltage Drain Current I DSS - - 1 μA VDS=16V, VGS=0 - - 10 VDS=20V, VGS= 0, TJ= 55°C On-State Drain Current 1 I D(on) 7 - - A V DS=5V, VGS=4.5V Drain-Source On-Resistance 1 R DS(ON) - - 76 mΩ VGS=4.5V, ID=3.4A - - 103 V GS=2.5V, ID=2.9A Forward Transconductance 1 g fs - 7 - S V DS=5V, ID=1.5A Diode Forward Voltage V SD - 0.7 - V I S=1.6A, VGS=0 Dynamic 2 Total Gate Charge Q g - 3.5 - nC VDS=10V, VGS=4.5V, ID=3.4A Gate-Source Charge Q gs - 0.55 - Gate-Drain Charge Q gd - 0.95 - Input Capacitance C iss - 815 - pF VDS=15V, VGS=0, f=1MHz Output Capacitance C oss - 175 - Reverse Transfer Capacitance C rss - 106 - Turn-on Delay Time T d(on) - 5 - nS VDD=10V, VGEN=4.5V, RL=6, RG=6 Rise Time T r - 8 - Turn-off Delay Time T d(off) - 11 - Fall Time T f - 3 - Notes: 1 Pulse test ：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not s ubject to production testing.

N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 11-Feb-2011 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE

N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 11-Feb-2011 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE