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Technical content

Ordering Information

3000/Tape& Reel SMG2302B 02B 20V N-Channel Enhancement-Mode MOSFET

FEATURES

  • R DS(ON)≦85mΩ@VGS=4.5V
  • R DS(ON)≦115mΩ@VGS=2.5V
  • R DS(ON)≦135mΩ@VGS=1.8V
  • Super high density cell design for extremely low RDS(ON)
  • Exceptional on-re sistance and maximum DC current capability

APPLICATIONS

  • Power Management in Notebook
  • Portable Equipment
  • Load Switch
  • DSC Parameter Symbol Limit Unit Drain-Source Voltag e VDSS 20 V Gate-Source Voltage VGSS ±8 V Continuous Drain C urrent(tJ=150℃) TA=25℃ ID 2.8 A TA=70℃ 2.2 Pulsed Drain Curr ent IDM 10 Maximum Body-Diode C ontinuous Current IS 1.6 A Maximum Power Dissi pation TA=25℃ PD 1.25 W TA=70℃ 0.8 Operating Junction Temperature TJ 150 ℃ Maximum Junction-to- Ambient RthJA T ≦10 sec 77 ℃/W Steady State 105 Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) *The device mounte d on 1in2 FR4 board with 2 oz copper
  • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SMG2302B SOT– 23 2014-05 WILLAS ELECTRONIC CORP.

ELECTRICAL CHARACTERISTICS

Symbol Parameter Limit Min Typ Max Unit STATIC PARAM ETERS V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 20 V VGS(th) Gate Thresh old Voltage VDS=VGS, ID=250μA 0.6 0.9 1.2 IGSS Gate-Body Lea kage Current VDS=0V, VGS=±8V ±100 nA IDSS Zero Gate V oltage Drain Current VDS=20V, VGS=0V 1 μA VDS=20V, VGS=0V TJ=55℃ ID(ON) On-State Dr ain Current a VDS≧5V, VGS= 4.5V 6 A VDS≧5V, VGS= 2.5V 4 RDS(ON) Drain-Source On-Resistance VGS=4.5V, ID= 2.8A 55 85 mΩ VGS=2.5V, ID= 2.5A 65 11 VGS=1.8V, ID= 2.2A 80 13 VSD Diode Forwa rd Voltage IS=1A, VGS=0V 0.75 1. 2 V DYNAMIC PARAM ETERS Qg Total Gat e Charge VDS=10V, VGS=4.5V, ID=2.8A nC Qgs Gate-Sour ce Charge 2.2 Qgd Gate-Dra in Charge 3 Ciss Input Ca pacitance VDS=10V, VGS=0V, f=1MHZ pF Coss Output Ca pacitance 72 Crss Reverse T ransfer Capacitance 22 td(on) Turn-On Delay Time VDD=10V, RL =10Ω VGEN=4.5Ω, RG=6Ω ns tr Rise Time 23 td(off) Turn-Of f Delay Time 38 tf Fall Time 3 Notes: ≦ 300us, duty cycle≦ 2% a. Pulse test; pulse width SMG2302B 2014-05 WILLAS ELECTRONIC CORP. 20V N-Channel Enhancement-Mode MOSFET

Typical Characteristics (TJ =25℃ Noted) SMG2302B 2014-05 WILLAS ELECTRONIC CORP. 20V N-Channel Enhancement-Mode MOSFET

Typical Characteristics (TJ =25℃ Noted) SMG2302B 2014-05 WILLAS ELECTRONIC CORP. 20V N-Channel Enhancement-Mode MOSFET

Dimensions in inches and (millimeters) SOT-23 Rev.D .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)MIN. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)MAX. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2014-05 WILLAS ELECTRONIC CORP. 20V N-Channel Enhancement-Mode MOSFET SMG2302B

Ordering Information: Device PN Packing SMG2302B ‐T(1 ) G(2)‐WS Tape&Reel: 3 Kpcs/Reel Note: (1) Packing code, Tape & Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheet s and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or ot her applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agre e to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 20V N-Channel Enhancement-Mode MOSFET SMG2302B 2014-05 WILLAS ELECTRONIC CORP.