SMG2302_15 SECOS | Alldatasheet
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- Capable of 2.5V gate drive * Small package outline Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Parameter Symbol Ratings Unit Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient 3 A V V A A ID@TA=70 /W C W / C C W VDS VGS ID@TA=25 IDM PD@TA=25 Tj, Tstg Rthj-a ±12 3.2 2.6 1.38 0.01 -55~+150 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm SC-59 o o o Co Co Co 1,2 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual S G D B L A Top View H C J K Gate Source Drain D G S and cost-effectiveness. Marking : 2302 0 1- J u n - 2 0 0 2 R e v . A P a g e 1 o f 4 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
3.2A, 20V,RDS(ON) 85m N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 0.1 0.5 1.2 100 115 4.4 0.6 1.9 5.2 5.7 145 100 V V nA uA uA m nC nS pF Ω VGS=0V VDS=10V f=1.0MHz VDD=10V ID=3.6A VGS=5V RG=6 RD=2.8 Ω Ω ID=3.6A VDS=10V VGS=4.5V VGS=4.5V, ID=3.6A VGS=2.5V, ID=3.1A VGS=0V, ID=250uA VGS= 12V± VDS=20V,VGS=0 VDS=20V,VGS=0 VDS=VGS, ID=250uA Reference to 25 ,ID=1mA Source-Drain Diode Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage Continuous Source Current (Body Diode) VSD Is _ _ IS=1.6A, VGS=0V. VD=VGG=0V, VS=1.2V V A 1.2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width 300us, dutycycle 2%.≦≦ 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270 when mounted on min. copper pad.°C/W Forward Transconductance Gfs S6 VDS=5V, ID=3.6A_ _Pulsed Source Current (Body Diode) ISM 10 A_ C o o C o C o C o Ω 01-Jun-2002 Rev. A Page 2 of 4
3.2A, 20V,RDS(ON) 85m N-Channel Enhancement Mode Power Mos.FET Ω Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature 01-Jun-2002 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Characteristics Curve
3.2A, 20V,RDS(ON) 85m N-Channel Enhancement Mode Power Mos.FET Ω Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 01-Jun-2002 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual