DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

-2.6 A, -20 V , RDS(ON) 130 m P-Channel Enhancement MOSFET 14-Jan-2011 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SC-59 Top View A L C B D G H JF K E 1 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES

 Low R DS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SC-59 saves board space.  Fast switching speed.  High performance trench technology.

PACKAGE INFORMATION

SC-59 3K 7’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage V GS ±8 V TA=25°C -2.6 Continuous Drain Current 1 TA=70°C ID -1.5 A Pulsed Drain Current 2 I DM -10 A Continuous Source Current (Diode Conduction) 1 I S ±1.6 A TA=25°C 1.25 Power Dissipation 1 TA=70°C PD 0.8 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Ratings t≦5 sec 100 Maximum Junction to Ambient 1 Steady-State RθJA 166 °C/W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. Gate Source Drain A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50

-2.6 A, -20 V , RDS(ON) 130 m P-Channel Enhancement MOSFET 14-Jan-2011 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage V GS(th) -0.4 - -1 V V DS = VGS, ID = -250μA Gate-Body Leakage I GSS - - ±100 nA V DS = 0V, VGS= ±8V - - -1 VDS = -16V, VGS= 0V Zero Gate Voltage Drain Current I DSS - - -10 μA VDS = -16V, VGS= 0V, TJ=55°C On-State Drain Current 1 I D(ON) -3 - - A V DS = -5V, VGS= -4.5V Drain-Source On-Resistance 1 R DS(ON) - - 0.190 Ω VGS= -2.5V, ID = -2.1A Forward Transconductance 1 g FS - 3 - S V DS= -5V,,ID = -2.8A Diode Forward Voltage V SD - -0.70 - V I S= -1.6A, VGS= 0V Dynamic 2 Total Gate Charge Q g - 12.2 - Gate-Source Charge Q gs - 1.1 - Gate-Drain Charge Q gd - 1.5 - nC ID= -2.6A VDS= -5V VGS= -4.5V Turn-On Delay Time Td (ON) - 6.5 - Rise Time T r - 20 - Turn-Off Delay Time Td (OFF) - 31 - Fall Time T f - 21 - nS VDD= -5V VGEN= -4.5V RG= 6Ω RL= 5Ω Notes: 1. Pulse test ：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing.

-2.6 A, -20 V , RDS(ON) 130 m P-Channel Enhancement MOSFET 14-Jan-2011 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE

-2.6 A, -20 V , RDS(ON) 130 m P-Channel Enhancement MOSFET 14-Jan-2011 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE