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Technical content

20V P-Channel Enhancement-Mode MOSFET

Ordering Information

3000/Tape& Reel

FEATURES

  • R DS(ON) ≦110mΩ@VGS=-4.5V
  • R DS(ON) ≦150mΩ@VGS=-2.5V
  • Super high density cell design for extremely low R DS(ON)

APPLICATIONS

  • Power Management in Note book
  • Portable Equipment
  • Battery Powered System
  • Load Switch
  • DSC SMG2301B 01B Parameter Symbol Limit Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V TA=25℃ -2.0 Continuous Drain Current (Tj=150℃)* TA=70℃ ID -1.6 A Pulsed Drain Current IDM -10 A TA=25℃ 0.7 Maximum Power Dissipation TA=70℃ PD 0.45 W Operating Junction Temperature TJ -55 to 150 ℃ Storage Temperature Range Tstg -55 to 150 ℃ Typical Maximum Thermal Resistance-Junction to Ambient* RθJA 100 175 ℃/W SMG2301B G D S SOT– 23 2014-05 WILLAS ELECTRONIC CORP.

ELECTRICAL CHARACTERISTICS

Symbol Parameter Limit Min Typ Max Unit STATIC V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -20 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250μA -0.4 -0.6 -1 V IGSS Gate Leakage Current VDS=0V, VGS=±8V ±100 nA IDSS Zero Gate Voltage Drain Current V DS=-20V, VGS=0V -1 μA VGS=-4.5V, ID= -2.8A 90 110 RDS(ON) Drain-Source On-Resistance a VGS=-2.5V, ID= -2.0A 110 150 mΩ VSD Diode Forward Voltage IS=-1A, VGS=0V -0.7 -1.4 V DYNAMIC Qg Total Gate Charge 7.2 Qgs Gate-Source Charge 2.2 Qgd Gate-Drain Charge VDS=-6V, VGS=-4.5V, ID=-2.8A 1.2 nC Rg Gate resistance VDS=0V, VGS=0V, f=1MHz 7.5 Ω Ciss Input Capacitance 480 Coss Output Capacitance 46 Crss Reverse Transfer Capacitance VDS=-15V, VGS=0V, f=1MHz pF td(on) Turn-On Delay Ti me 50 tr Turn-On Rise Tim e 30 td(off) Turn-Off Delay Time 40 tf Turn-Off Fall time VDS=-6V, RL =6Ω RGEN=6Ω, VGS=-4.5V ns 2014-05 WILLAS ELECTRONIC CORP. SMG2301B 20V P-Channel Enhancement-Mode MOSFET

2014-05 WILLAS ELECTRONIC CORP. SMG2301B 20V P-Channel Enhancement-Mode MOSFET

2014-05 WILLAS ELECTRONIC CORP. SMG2301B 20V P-Channel Enhancement-Mode MOSFET

Dimensions in inches and (millimeters) SOT-23 Rev.D .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)MIN. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)MAX. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2014-05 WILLAS ELECTRONIC CORP. 20V P-Channel Enhancement-Mode MOSFET SMG2301B

Ordering Information: Device PN Packing SMG2301 ‐T(1 ) G(2)‐WS Tape&Reel: 3 Kpcs/Reel Note: (1) Packing code, Tape & Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLA S data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 20V P-Channel Enhancement-Mode MOSFET SMG2301B 2014-05 WILLAS ELECTRONIC CORP.