SMG2301-C

SMG2301-C SECOS | Alldatasheet

Document overview

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Technical content

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG2301-C -3.5A , -20V , R DS(ON) 75mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 25-May-2017 Rev. B Page 1 of 4 SC -59 TOP VIEW RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

The SMG2301-C is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The SMG2301-C meet the RoHS and Green Product requirement with full function reliability approved.

FEATURES

/circle6 Advanced high cell density Trench technology /circle6 Super Low Gate Charge /circle6 Green Device Available MARKING 2301

PACKAGE INFORMATION

≦10sec Steady State Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current 1@V GS = -4.5V TA=25° C ID -3.5 -3.1 A TA=70° C -2.8 -2.5 Pulsed Drain Current 3 IDM -15.5 A Power Dissipation T A=25° C PD 1.38 W Operating Junction and Storage Temperature Range TJ, T stg -55~150 ° C Thermal Resistance Rating Thermal Resistance Junction-ambient 1 R θJA ≦10sec, 90 ° C/W Steady State,125 Thermal Resistance Junction-ambient 2 270 Thermal Resistance Junction-case 1 R θJC 80 Package MPQ Leader Size SC-59 3K 7 inch Part Number Type SMG2301-C Lead (Pb)-free and Halogen-free Top View A L C B D G H JF K E 1 2 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0.1 0 REF. B 2. 10 3.00 H 0.40 REF. C 1.2 0 1. 70 J 0. 047 0.20 7 D 0.89 1.40 K 0.5 REF. E 2.00 Typ. L 0.95 REF. F 0.30 0.50

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG2301-C -3.5A , -20V , R DS(ON) 75mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 25-May-2017 Rev. B Page 2 of 4

ELECTRICAL CHARACTERISTICS

(T J=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS -20 - - V V GS =0, I D = -250uA Gate-Threshold Voltage V GS(th) -0.5 - -1.2 V V DS =V GS , I D = -250uA Forward Transconductance g fs - 9 - S V DS = -5V, I D = -3A Gate-Body Leakage Current I GSS - - ±100 nA VGS = ±12V Drain-Source Leakage Current TJ=25° C IDSS - - -1 µA VDS = -16V, V GS =0 TJ=55° C - - -5 V DS = -16V, V GS =0 Drain-Source On-Resistance 4 R DS(ON) - - 75 m Ω VGS = -5V, I D = -2.8A Total Gate Charge Q g - 9.7 - nC VDS = -15V VGS = -4.5V ID = -3A Gate-Source Charge Q gs - 2.05 - Gate-Drain Charge Q gd - 2.43 - Turn-on Delay Time T d(on) - 4.8 - nS VDS = -10V VGS = -4.5V ID = -3A R G =3.3 Ω Rise Time Tr - 9.6 - Turn-off Delay Time T d(off) - 52 - Fall Time Tf - 8.4 - Input Capacitance C iss - 686 - pF VGS =0 VDS = -15V f=1.0MHz Output Capacitance C oss - 90.8 - Reverse Transfer Capacitance C rss - 80.4 - Source-Drain Diode Diode Forward Voltage 4 V SD - - -1.2 V I S= -1.6A, V GS =0 Continuous Source Current 1 I S - - -3.1 A Pulsed Source Current 3 I SM - - -15.5 A Reverse Recovery Time t rr - 8.4 - nS IF= -3A , dI/dt=100A/µs TJ=25° C Reverse Recovery Charge Q rr - 3.3 - nC Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. When mounted on Min. copper pad. 3. Pulse width limited by maximum junction temperature. 4. The data tested by pulsed , pulse width ≦300us, duty cycle ≦2%.

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG2301-C -3.5A , -20V , R DS(ON) 75mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 25-May-2017 Rev. B Page 3 of 4 CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG2301-C -3.5A , -20V , R DS(ON) 75mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 25-May-2017 Rev. B Page 4 of 4 CHARACTERISTIC CURVES