SMG2007-C SECOS | Alldatasheet
Document overview
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Technical content
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SMG2007-C -7.2A , -20V , R DS(O/glyph1197) 19m ΩΩ ΩΩ P-Channel Enhancement Mode MOSFET 14-Dec-2017 Rev. A Page 1 of 4 SC-59 TOP VIEW 2007 RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
FEATURES
The SMG2007-C provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SC-59 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
APPLICATIONS
/circle6 Simple Drive Requirement /circle6 Lower On-resistance /circle6 Fast Switching MARKING
PACKAGE INFORMATION
(T A=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V TC=25°C -7.2 TC=100°C -5 TA=25°C -4.7 Continuous Drain Current 1@V GS = -4.5V TA=70°C ID -3.8 A Pulsed Drain Current 3 IDM -20 A Power Dissipation T A=25°C P D 1.38 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 °C Thermal Resistance Rating t≦5sec , 90 Maximum Junction to Ambient 1 R θJA Steady State , 125 Maximum Junction to Ambient 2 R θJA 270 Thermal Resistance Junction to Case 1 R θJC 80 °C / W Package MPQ Leader Size SC-59 3K 7 inch Part Number Type SMS2007-C Lead (Pb)-free and Halogen-free A 2.70 3.10 G 0.10 REF. B 2. 10 3.0 0 H 0.40 REF. C 1.2 0 1. 7 0 J 0. 0 47 0.20 7 D 0.89 1.40 K 0.5 REF. E 2.00 Typ. L 0.95 REF. F 0.30 0.50 Top View A L C B D G H JF K E 1 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SMG2007-C -7.2A , -20V , R DS(O/glyph1197) 19m ΩΩ ΩΩ P-Channel Enhancement Mode MOSFET 14-Dec-2017 Rev. A Page 2 of 4
ELECTRICAL CHARACTERISTICS
(T J=25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS -20 - - V V GS =0, I D= -250uA Gate-Source Threshold Voltage VGS(th) -0.3 - -0.9 V V DS =V GS , I D= -250uA Forward Transconductance gfs - 19.1 - S V DS = -5V, I D= -4.5A Gate-Body Leakage Current IGSS - - ±100 nA VDS =0,V GS = ±12V - - -1 V DS = -20V, V GS =0,T J =25°C Drain-Source Leakage Current IDSS - - -5 µA VDS = -20V, V GS =0,T J =55°C - - 25 V GS = -2.5V, I D= -2A Drain-Source On-Resistance RDS(ON) - - 30 mΩ VGS = -1.8V, I D= -1A Total Gate Charge Q g - 24.5 - Gate-Source Charge Q gs - 2.9 - Gate-Drain Charge Q gd - 4.9 - nC VDS = -10V, VGS = -4.5V, ID= -4.5A Turn-on Delay Time T d(on) - 6.8 - Rise Time T r - 26.6 - Turn-off Delay Time T d(off) - 222.8 - Fall Time T f - 115.4 - nS VDS = -10V, VGS = -4.5V, ID= -1A, RG=6Ω, RL=10Ω Input Capacitance C iss - 2100 - Output Capacitance C oss - 213 - Reverse Transfer Capacitance Crss - 166 - pF VDS = -10V, VGS =0, f=1.0MHz Source-Drain Diode Continuous Source Current 1 IS -1.7 A Pulsed Source Current 3 I SM -10 A Forward On Voltage 4 V SD - - -1.2 V I S= -1.7A, V GS =0V Reverse Recovery Time T rr - 67.5 - ns Reverse Recovery Charge Q rr - 51.6 - nC IS= -1.7A, V GS =0V dI/dt=100A/µs Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. When mounted on Min. copper pad. 3. Pulse width limited by maximum junction temperature , Pulse Width ≤300µs, Duty Cycle≤2%. 4. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SMG2007-C -7.2A , -20V , R DS(O/glyph1197) 19m ΩΩ ΩΩ P-Channel Enhancement Mode MOSFET 14-Dec-2017 Rev. A Page 3 of 4 CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SMG2007-C -7.2A , -20V , R DS(O/glyph1197) 19m ΩΩ ΩΩ P-Channel Enhancement Mode MOSFET 14-Dec-2017 Rev. A Page 4 of 4 CHARACTERISTIC CURVES