SMG138K SECOS | Alldatasheet
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- Simple drive Requirement * Small package outline Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Parameter Symbol Ratings Unit Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient 3 mA V V mA mA ID@TA=70 /W C W / C C W VDS VGS ID@TA=25 IDM PD@TA=25 Tj, Tstg Rthj-a ±20 950 640 500 1.38 0.01 -55~+150 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm SC-59 o o o C o C o C o 1,2 S G D B L A Top View H C J K Gate Source Drain D G S Marking : 138E industrial application 01-Jun-2002 Rev. A Page 1 of 4 * RoHS Compliant Product http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
640mA, 50V,RDS(ON) 2 N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 0.06 0.5 2.0 100 0.5 0.5 V V nA uA uA nC nS pF Ω VGS=0V VDS=25V f=1.0MHz VDD=30V ID=0.6A VGS=10V RG=3.3 RD=52 Ω Ω ID=0.6A VDS=50V VGS=4.5V VGS=10V, ID=0.5A VGS=4.5V, ID=0.4A VGS=0V, ID=250uA VGS= 20V± VDS=50V,VGS=0 VDS=40V,VGS=0 VDS=VGS, ID=1mA Reference to 25 ,ID=1mA Source-Drain Diode Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage VSD __ IS=0.2A, VGS=0V.V1.2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width 300us, dutycycle 2%.≦≦ 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270 O C/W when mounted on Min. copper pad. Forward Transconductance Gfs mS600 VDS=10V, ID=0.6A_ 1.6 o Co Co Co Co Ω 01-Jun-2002 Rev. A Page 2 of 4
640mA, 50V,RDS(ON) 2 N-Channel Enhancement Mode Power Mos.FET Ω 01-Jun-2002 Rev. A Page 3 of 4 Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Characteristics Curve
640mA, 50V,RDS(ON) 2 N-Channel Enhancement Mode Power Mos.FET Ω 01-Jun-2002 Rev. A Page 4 of 4 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual