SMG1330N SECOS | Alldatasheet

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Technical content

2.0A , 30V , R DS(ON) 58 mΩΩ ΩΩ N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 29-Aug-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H JF K E 1 2 RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low R DS(ON) and to ensure minimal power loss and heat dissipation.

FEATURES

/circle6 Low R DS(on) provides higher efficiency and extends battery life. /circle6 Low thermal impedance copper leadframe SC59 saves board space. /circle6 Fast switching speed. /circle6 High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

(T A=25 °C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 TA=25 °C ID 2.0 A TA=70 °C 1.7 A Pulsed Drain Current 2 IDM ±20 A Continuous Source Current (Diode Conduction) 1 I S 1.6 A Power Dissipation 1 TA=25 °C PD 0.34 W TA=70 °C 0.22 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 °C Thermal Resistance Ratings Maximum Junction to Ambient 1 t ≦ 5 sec R θJA 100 °C / W Steady State 166 Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. SC-59 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0.10 REF. B 2. 25 3.00 H 0.40 REF. C 1.3 0 1. 70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50 TOP VIEW

2.0A , 30V , R DS(ON) 58 mΩΩ ΩΩ N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 29-Aug-2011 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T A=25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-Threshold Voltage V GS(th) 1 - - V V DS =V GS , I D =250uA Gate-Body Leakage I GSS - - ±100 nA VDS =0, V GS = ±20V Zero Gate Voltage Drain Current I DSS - - 1 µA VDS =24V, V GS =0 - - 10 V DS =24V, V GS =0, T J=55 °C On-State Drain Current 1 I D(on) 10 - - A V DS =5V, V GS =10V Drain-Source On-Resistance 1 R DS(ON) - - 58 m Ω VGS =10V, I D =2A - - 82 V GS =4.5V, I D =1.7A Forward Transconductance 1 g fs - 11.3 - S V DS =10V, I D =2A Diode Forward Voltage V SD - 0.75 - V I S=1.6A, V GS =0 Dynamic 2 Total Gate Charge Q g - 7.5 - nC VDS =10V, V GS =5V, ID =2A Gate-Source Charge Q gs - 0.6 - Gate-Drain Charge Q gd - 1 - Turn-on Delay Time T d(on) - 8 - nS VDD =10V, VGEN =4.5V, R L=15Ω, I D =1A Rise Time T r - 24 - Turn-off Delay Time T d(off) - 35 - Fall Time T f - 10 - Notes: 1 Pulse test ：PW ≦ 300 µs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing.