SMG120N40E1

SMG120N40E1 SILIKRON | Alldatasheet

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©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: 1.0 page 1 of 8 MainProductCharacteristics: FeaturesandBenefits: Applications: Absolute Max Rating: Symbol Parameter Value Units VCES Collector-EmitterVoltage 1250 V VGES Gate-EmitterVoltage ±30 V IC CollectorCurrent 80 A CollectorCurrent@TC =100°C 40 ICpuls PulsedCollectorCurrent，tp limitedbyTjmax 160 - Turnoffsafeoperatingarea，VCE=1200V，TJ=175°C 160 IF DiodeContinuousForwardCurrent@TC=100°C 40 IFM DiodeMaximumForwardCurrent 160 PD PowerDissipation@TC=25°C 468 W PowerDissipation@TC =100°C 234 W TJ TSTG OperatingJunctionandStorageTemperatureRange -55to+175 °C TL MaximumTemperatureforSoldering 260 °C VCES 1250V IC 40A VCE(sat) 1.8V TO-247 SchematicDiagram  TrenchFS technologyoffering  Highspeedswitching  LowgatechargeandVCE(sat)  Highruggedness,temperature stable behavior  Maximumjunctiontemperature175°C G C E  SolarInverters  Uninterruptible power supplies  Motor drives  Aircondition

©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version:1.0 page 2 of 8 Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC ThermalResistance,Junction-to-caseforIGBT — 0.32 °C/W ThermalResistance,Junction-to-caseforDiode — 0.61 °C/W RθJA ThermalResistance,Junction-to-ambient — 40 °C/W Electrical Characteristics@TA=25°C unlessotherwisespecified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-EmitterBreakdownVoltage 1250 — — V VGE=0V,ICE=1mA VCE(sat) Collector-EmitterSaturationVoltage — 1.8 2 V IC=40A,VGE=15V@TJ=25°C — 2.25 — IC=40A,VGE=15V@TJ=175°C VGE(th) GateThresholdVoltage 4.5 — 6 V IC=1.9mA,VCE=VGE ICES Collector-EmitterLeakageCurrent — — 200 μA VGE=0V,VCE=1200V IGES GatetoEmitterReverseLeakage — — 200 nA VGE=25V,VCE =0V — — -200 VGE=-25V,VCE =0V Cies Inputcapacitance — 4700 — pF VGS =0V VDS =50V ƒ=1MHz Coes Outputcapacitance — 106 — Cres Reversetransfercapacitance — 66 — td(on) Turn-ondelaytime — 40 — ns VCC=600V, VGE=0.0/15.0V, RG=10.0Ω, Lσ=70nH, Cσ=67pF tr Risetime — 23 — td(off) Turn-Offdelaytime — 350 — tf Falltime — 50 — Eon Turn-OnSwitchingLoss — 2.2 — mJ VCC=600V, VGE=0.0/15.0V, RG=10.0Ω, Lσ=70nH, Cσ=67pF Eoff Turn-OffSwitchingLoss — 1.8 — Ets TotalSwitchingLoss — 4 — Qg TotalGateCharge — 238 — nC VCC=480V,IC=40A, VGE=15V Qge GatetoEmitterCharge — 40 — Qgc GatetoCollectorCharge — 135 — Electrical Characteristics of the Diode@TA=25°C unlessotherwisespecified Symbol Parameter Min. Typ. Max. Units Conditions VFM DiodeForwardVoltage — 2.3 3 V IF=40A,VGE=0V trr ReverseRecoveryTime — 320 — ns TJ =25°C,IF =40A,di/dt= 700A/μs Qrr ReverseRecoveryCharge — 2.6 — μC IRRM DiodePeakReverseRecovery Current — 19 — A

©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version:1.0 page 3 of 8 Typical Electrical and Thermal Characteristics Figure1. Typical Output Characteristics Figure2. Typical Transfer Characteristics Figure3.Typical Capacitance Figure4. Typical Gate Charge Figure5. Power Dissipation vs. Case Temperature Figure6. Collector-Emitter Saturation Voltage vs. Temperature

©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version:1.0 page 4 of 8 Typical Electrical and Thermal Characteristics Figure7. Gate Threshold Voltage vs. Temperature Figure8. Collector-Emitter Breakdown Voltage vs. Temperature

©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version:1.0 page 5 of 8 Mechanical Data： Option1:

©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version:1.0 page 6 of 8 Option2:

©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version:1.0 page 7 of 8 Option3: Unit:mm

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