SMG111K SECOS | Alldatasheet
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Marking : 111E The SMG111K utilized advanced processing techniques to achieve the lowest possible on- resistance, extremely efficient and cost-effectiveness device. The SMG111K is universally used for all commercial-industrial applications. Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V @10V mA mA mA 640 500 950 1.38 1,2 Continuous Drain Current, VGS Pulsed Drain Current Parameter Symbol Ratings Unit Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient V V ID@TA=70 /W C W / C C W VDS VGS ID@TA=25 IDM PD@TA=25 Tj, Tstg Rthj-a 0.01 -55~+150 o o o C o C o C o Max. Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm SC-59 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual S G D B L A Top View H C J K Gate Source Drain 01-Jun-2002 Rev. A Page 1 of 4 * RoHS Compliant * Simple Drive Requirement * Small Package Outline D G S
Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf V V nA uA uA nC nS pF Ω VGS=0V, ID=250uA VDS=VGS, ID=250uA Reference to 25 , ID=1mA Forward Transconductance Gfs mS_ C o C o C o 0.06 0.5 2.0 100 0.5 0.5 600 C o 1.6 VGS=0V VDS=25V f=1.0MHz VDD=30V ID=600mA VGS=10V RG=3.3 RD=52 Ω Ω ID=600mA VDS=50V VGS=4.5V VGS=10V, ID=500mA VGS=4.5V, ID=500mA VGS= ±20V VDS= V,VGS=0 VDS= V,VGS=0 VDS=10V, ID=600mA o Elektronische Bauelemente 01-Jun-2002 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Source-Drain Diode Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage VDS __ IS=200mA, VGS=0V.V1.2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width 300us, dutycycle 2%.≦≦ 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270 when mounted on min. copper pad.°C/W SMG111K 640mA, 55V,RDS(ON)2 N-Channel Enhancement Mode Power Mos.FET Ω
640mA, 55V,RDS(ON)2 N-Channel Enhancement Mode Power Mos.FET Ω http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 Characteristics Curve Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage
640mA, 55V,RDS(ON)2 N-Channel Enhancement Mode Power Mos.FET Ω http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform