SMG065NA8E1 SILIKRON | Alldatasheet
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©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: Preliminary page 1 of 8 Main Product Characteristics: Features and Benefits: Applications: Absolute Max Rating: Symbol Parameter Value Units VCES Collector-Emitter Voltage 700 V VGES Gate- Emitter Voltage ±30 V IC Collector Current 200 A Collector Current @TC = 100 ° C 100 ICpuls Pulsed Collector Current，tp limited by Tjmax 400 - Turn off safe operating area，VCE=650V，TJ=175° C 400 IF Diode Continuous Forward Current @TC = 25 ° C 200 A Diode Continuous Forward Current @TC = 100 ° C 100 IFM Diode Maximum Forward Current 400 PD Power Dissipation @ TC = 25° C 428 W TJ TSTG Operating Junction and Storage Temperature Range -55 to +175 °C VCES 700V IC 100A VCE(sat) 1.8V TO - 247 Schematic Diagram ◼ Trench FS technology offering ◼ High speed switching ◼ Low gate charge and VCE(sat) ◼ High ruggedness, temperature stable behavior ◼ Maximum junction temperature 175°C G C E ◼ Solar inverters ◼ Uninterruptible power supplies ◼ Motor drives ◼ Air condition
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: Preliminary page 2 of 8 Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Thermal Resistance,Junction-to-case for IGBT — 0.35 °C/W Thermal Resistance,Junction-to-case for Diode — 0.45 °C/W RθJA Thermal Resistance,Junction-to-ambient — 40 °C/W Electrical Characteristics @TA=25°C unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-Emitter Breakdown Voltage 700 760 — V VGE=0V,ICE=1mA VCE(sat) Collector-Emitter Saturation Voltage — 1.8 2.1 V IC=100A ,VGE=15V @TJ=25° C VGE(th) Gate Threshold Voltage 4.5 — 6.5 V IC=250μA,VCE=VGE ICES Collector-Emitter Leakage Current — — 1 μA VGE =0V,VCE=650V IGES Gate to Emitter Reverse Leakage — — 100 nA VGE=20V,VCE =0V — — -100 VGE=-20V,VCE =0V Cies Input capacitance — 7300 — pF VGS = 0V VDS = 25V ƒ = 1MHz Coes Output capacitance — 245 — Cres Reverse transfer capacitance — 150 — td(on) Turn-on delay time — 57 — ns VCC=400V,IC=90A, VGE=0/15V, Rg=10Ω, tr Rise time — 91 — td(off) Turn-Off delay time — 315 — tf Fall time — 53 — Eon Turn-On Switching Loss — 3.8 — mJ VCC=400V,IC=90A, VGE=0/15V, Rg=10Ω, Eoff Turn-Off Switching Loss — 2.0 — Ets Total Switching Loss — 5.8 — Qg Total Gate Charge — 225 — nC VCC=480V, IC=100A, VGE=15V Qge Gate to Emitter Charge — 52 — Qgc Gate to Collector Charge — 93 — IC(SC) Short circuit collector current Max.1000 short circuits Time between short circuits: ≥1.0s — 660 — A VGE=15V,VCC≤400V, tsc≤7μs Electrical Characteristics of the Diode@TA=25°C unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions VFM Diode Forward Voltage — 1.80 3.2 V IF=100A trr Reverse Recovery Time — 169 — ns TJ = 25° C,IF=90A,VR=400V VGE=0/15V Qrr Reverse Recovery Charge — 1.69 — μC IRRM Diode Peak Reverse Recovery Current — 17 — A
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: Preliminary page 3 of 8 Typical Electrical and Thermal Characteristics Figure1. Typical Output Characteristics Figure2. Typical Transfer Characteristics Figure3.Typical Capacitance Figure4. Typical Gate Charge Figure5.Collector-Emitter Breakdown Voltage vs. Temperature Figure6. Collector-Emitter Saturation Voltage vs. Temperature
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: Preliminary page 4 of 8 Typical Electrical and Thermal Characteristics Figure7.Gate Threshold Voltage vs. Temperature Figure8.Collector Current vs. Temperature Figure9. Power Dissipation vs. Case Temperature
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: Preliminary page 5 of 8 Mechanical Data： Option1: Unit:mm
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: Preliminary page 6 of 8 Option2:
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: Preliminary page 7 of 8 Option3:
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: Preliminary page 8 of 8 ATTENTION: ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. ■ Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. ■ Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. ■ Silikron Microelectronics (Suzhou) Co.,Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. ■ In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Microelectronics (Suzhou) Co.,Ltd. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use.