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Case: SOD-123FL Molded Plastic 5.0 to 19 0Volts 200Watts SMD TRANSIENT VOLTAGE SUPPRESSORS Terminals:Solderable per 30 A 200 W Feat ures /G01/G01 /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 M aximum Ratings and Electrical Characteristics @TA=2 5°C unless otherwise specified 1 of 4 Characteri stic Symbol Value Unit Peak Pulse Power Dissipation at TA = 25°C (Note 1, 2, 5) Figure 3 PPPM Peak Forward Surge Current (Note 3) IFS M Peak Pulse Current on 10/1000µS Waveform (Note 1) Figure 1 IPPM S ee Table 1 A S teady State Power Dissipation (Note 2, 4) PM( AV) 1.0 W Operating and Storage Temperature Range Tj, TST G -55 t o +150 °C Not e: 1. Non-repetitive current pulse, per Figure 1 and derated above TA = 25°C per Figure 4. 2. Mounted on 40mm2 c opper pad. 3. 8.3ms single half sine-wave duty cycle = 4 pulses per minutes maximum. 4. Lead temperature at 75°C = TL . Peak pulse power waveform is 10/1000µS. ! G lass Passivated Die Construction ! 200W Peak Pulse Power Dissipation ! Uni- and Bi-Directional Versions Available ! Excellent Clamping Capability ! Fast Response Time ! Plastic Case Material has UL Flammability M echanical Data MIL- STD-202, Method 208 ! Polarity: Cathode Band or Cathode Notch ! Marking: Unidirectional – Device Code and Cathode Band Bidirectional – Device Code Only Weight: 0.064 grams (approx.)! ! Lead Free: For RoHS / Lead Free Version Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com “C” Suffix Designat es Bi-directional Devices “A” Suffix Designates 5% Tolerance Devices No Suffix Designates 10% Tolerance Devices 5.0V-190V Standoff Voltage 1.00.2 2.80.1 9± 0.1 Cat hode Band Top View 3.70.2 0.60.25 4± 0.15 0.10-0.30 SOD - 123FL Dimensions in millimeters SMF5.0A/CA-SMF19 0A/CA SMF5.0A/CA-SMF19 0A/CA

Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Ratings and Characteristic Curves TA=25°C unless otherwise noted SMF5.0A/CA-SMF19 0A/CA SMF5.0A/CA-SMF19 0A/CA 100 1000 10000 1 10 100 1000 C , JUNCTION CAPACITANCE (pF)T V , STANDOFF VOLTAGE (V)WM Fig.2 Typical Total Capacitance T = 2 5°Cj Unidirectional Bidirectional

10 X 1000 Waveform

T , AMBIENT TEMPERATURE (°C)A Fig. 1 Pulse Derating Curve PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT 01 2 3 100 I , PEAK PULSE CURRENT (%I )Pp p Peak V alue Ipp Half V alue I /2pp 10 X

1000 Waveform

as defined by R.E.A. tp t, TIME (ms) Fig. 4 Pulse Waveform 0.1 1.0 0.1 10 100 1.0 1000 10000 T= 2 5°Cj P , PEAK PULSE POWER (kW)d 100 Non Repetitive Pulse Waveform S h o w ni nF i g .4 0.0 0.2 0.4 0.6 02 5 50 75 100 125 150 175 200 PM STEADY STATE POWER DISSIPATION (W)(AV), T , LEAD TEMPERATURE (°C)L Fig. 6 Steady State Power Derating Curve 0.8 1.0 60Hz Resistive or Inductive Load 2 5 10 PEAK FOR WARD SURGE CURRENT, (A) NUMBER OF CYCLES A T 60Hz Fig. 5 Maximum Non-Repetitive Surge Current 20 50 1001 Pulse Width 8.3ms Single Half-Sine-W ave (JEDEC METHOD)

@ Ta=25°C 3 of 4 Notes: 1. Suffix C denotes Bi-directional device. 2. VBR measured with IT current pulse = 300/c109s 3. For Bi-Directional devices having VRWM of 10V and under, the IR is doubled. Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com E lectrical Specification ※ For Bi-directional type ha ving VRWM of 10 Volts and less, the IR limit is double SMF SMF6.0A SMF SMF6.5A SMF SMF SMF7.5A SMF SMF8.0A SMF SMF SMF9.0A SMF SMF SMF11 SMF12A SMF SMF SMF14A SMF SMF SMF16A SMF SMF17A SMF SMF18A SMF SMF20A SMF SMF22A SMF SMF SMF26A SMF SMF SMF30A SMF SMF33A SMF SMF SMF40A SMF SMF43A SMF SMF45A SMF SMF48A SMF SMF SMF54A SMF SMF SMF60A SMF SMF SMF70A SMF SMF75A SMF SMF78A SMF SMF5.0A/CA-SMF19 0A/CA SMF5.0A/CA-SMF19 0A/CA Type Number Marking Reverse Stand-Off Voltage Breakdown Voltage Min. @IT Breakdo wn Voltage Max. @ IT Test Current Clam ping Voltage Peak Pulse Current Reverse Leakage @VRMW Uni Bi Uni Bi VRMW(V) VBR MIN(V) VBR M AX(V) IT (mA) VC(V) IPP(A) IR(uA)

@ Ta=25°C 4 of 4 Notes: 1. Suffix C denotes Bi-directional device. 2. VBR measured with IT current pulse = 300/c109s 3. For Bi-Directional devices having VRWM of 10V and under, the IR is doubled. Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com E lectrical Specification ※ For Bi-d irectional type having VRWM of 10 Volts and less, the IR limit is double Type Number Marking Reverse Stand-Off Voltage Breakdown Voltage Min. @IT Breakdo wn Voltage Max. @ IT Test Current Maximum Clam ping Voltage @IPP Peak Pulse Current Rev erse Leakage @VRMW Uni Bi Uni Bi VRMW(V) VBR MIN(V) VBR M AX(V) IT (mA) VC(V) IPP(A) IR(uA) SMF85A SMF SMF90A SMF SMF100A SMF SMF110A SMF120A SMF SMF130A SMF SMF150A SMF SMF160A SMF SMF170A SMF SMF180A SMF SMF190A SMF SMF5.0A/CA-SMF19 0A/CA SMF5.0A/CA-SMF19 0A/CA