SMCJ5.0 VISHAY | Alldatasheet

Document overview

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Technical content

Features

  • Underwriters Laboratory Recognition under UL standard for safety 497B: Isolated Loop Circuit Protection
  • Low profile package with built-in strain relief for surface mounted applications
  • Glass passivated junction
  • Low incremental surge resistance, excellent clamping capability
  • 1500W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01%
  • Very fast response time
  • High temperature soldering guaranteed: 250°C/10 seconds at terminals Mechanical Data Case: JEDEC DO-214AB molded plastic over passivated junction Terminals:Solder plated, solderable per MIL-STD-750, Method 2026 Polarity:For unidirectional types the band denotes the cathode, which is positive with respect to the anode under normal TVS operation Weight:0.007 oz., 0.21 g Flammability:Epoxy is rated UL 94V-0 Packaging Codes – Options (Antistatic): 51 – 1K per Bulk box, 10K/carton 57 – 850 per 7" plastic Reel (16mm tape), 8.5K/carton 9A – 3.5K per 13" plastic Reel (16mm tape), 35K/carton 0.185 MAX. (4.69 MAX.) 0.121 MIN. (3.07 MIN.) 0.060 MIN. (1.52 MIN.)

0.320 REF

Mounting Pad Layout Extended Voltage Range Devices for Bidirectional Applications For bi-directional devices, use suffix C or CA (e.g. SMCJ10C, SMCJ10CA). Electrical characteristics apply in both directions. Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol Value Unit Peak pulse power dissipation with PPPM Minimum 1500 Wa 10/1000µs waveform(1)(2) Peak pulse current with a 10/1000µs waveform(1) IPPM See Next Table A Peak forward surge current 8.3ms single half sine-wave(2) IFSM 200 Auni-directional only Typical thermal resistance, junction to ambient(3) R θJA 75 °C/W Typical thermal resistance, junction to lead R θJL 15 °C/W Operating junction and storage temperature range T J, TSTG –55 to +150 °C Notes:(1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2 (2) Mounted on 0.31 x 0.31”(8.0 x 8.0mm) copper pads to each terminal (3) Mounted on minimum recommended pad layout DO-214AB (SMC J-Bend)

SMCJ5.0 thru 188CA Vishay Semiconductors formerly General Semiconductor www.vishay.com Document Number 88394 2 26-Sep-02 Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. VF = 3.5V at IF = 100A (uni-directional only) Device Breakdown Voltage Maximum Maximum Maximum Device Type Marking V (BR) at IT(1) Test Stand-off Reverse Leakage Peak Pulse Surge Clamping Modified Code (V) Current Voltage at V WM Current IPPM Voltage at IPPM “J” Bend Lead UNI BI Min Max I T (mA) V WM (V) I D (µA) (3) (A)(2) VC (V) Notes:(1) Pulse test: tp ≤ 50ms (2) Surge current waveform per Fig. 3 and derate per Fig. 2 (3) For bi-directional types having V WM of 10 Volts and less, the ID limit is doubled (4) All terms and symbols are consistent with ANSI/IEEE C62.35 (5) For the bi-directional SMCG/SMCJ5.0CA, the maximum V (BR) is 7.25V + Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both uni-directional and bi-directional devices

SMCJ5.0 thru 188CA Vishay Semiconductors formerly General Semiconductor Document Number 88394 www.vishay.com 26-Sep-02 3 Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. VF = 3.5V at IF = 100A (uni-directional only) Device Breakdown Voltage Maximum Maximum Maximum Device Type Marking V (BR) at IT(1) Test Stand-off Reverse Leakage Peak Pulse Surge Clamping Modified Code (V) Current Voltage at V WM Current IPPM Voltage at IPPM “J” Bend Lead UNI BI Min Max I T (mA) V WM (V) I D (µA) (3) (A)(2) VC (V) +SMCJ75 GGQ GGQ 83.3 102 1.0 75 1.0 11.2 134 +SMCJ78 GGS GGS 86.7 106 1.0 78 1.0 10.8 139 +SMCJ85 GGU GGU 94.4 115 1.0 85 1.0 9.9 151 +SMCJ85A GGV GGV 94.4 104 1.0 85 1.0 10.9 137 +SMCJ90 GGW GGW 100 122 1.0 90 1.0 9.4 160 +SMCJ90A GGX GGX 100 111 1.0 90 1.0 10.3 146 +SMCJ100 GGY GGY 111 136 1.0 100 1.0 8.4 179 +SMCJ100A GGZ GGZ 111 123 1.0 100 1.0 9.3 162 +SMCJ110 GHD GHD 122 149 1.0 110 1.0 7.7 196 +SMCJ110A GHE GHE 122 135 1.0 110 1.0 8.5 177 +SMCJ120 GHF GHF 133 163 1.0 120 1.0 7.0 214 +SMCJ120A GHG GHG 133 147 1.0 120 1.0 7.8 193 +SMCJ130 GHH GHH 144 176 1.0 130 1.0 6.5 231 +SMCJ130A GHK GHK 144 159 1.0 130 1.0 7.2 209 +SMCJ150 GHL GHL 167 204 1.0 150 1.0 5.6 268 +SMCJ150A GHM GHM 167 185 1.0 150 1.0 6.2 243 +SMCJ160 GHN GHN 178 218 1.0 160 1.0 5.2 287 +SMCJ160A GHP GHP 178 197 1.0 160 1.0 5.8 259 +SMCJ170 GHQ GHQ 189 231 1.0 170 1.0 4.9 304 +SMCJ170A GHR GHR 189 209 1.0 170 1.0 5.5 275 SMCJ188 GHT GHT 209 255 1.0 188 1.0 4.4 344 SMCJ188A GHS GHS 209 231 1.0 188 1.0 4.6 328 Notes:(1) Pulse test: tp ≤ 50ms (2) Surge current waveform per Fig. 3 and derate per Fig. 2 (3) For bi-directional types having V WM of 10 Volts and less, the ID limit is doubled (4) All terms and symbols are consistent with ANSI/IEEE C62.35 + Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both uni-directional and bi-directional devices

SMCJ5.0 thru 188CA Vishay Semiconductors formerly General Semiconductor www.vishay.com Document Number 88394 4 26-Sep-02 Ratings and Characteristic Curves(TA = 25°C unless otherwise noted) C J — Junction Capacitance (pF) Fig. 4 – Typical Junction Capacitance Uni-Directional 100 0 7525 50 100 125 150 175 200 Peak Pulse Power (PPP ) or Current (IPP ) Derating in Percentage, % TA — Ambient Temperature (°C) 100 1,000 10,000 20,000 101 100 400 VWM — Reverse Stand-Off Voltage (V) Fig. 2 – Pulse Derating Curve PPPM — Peak Pulse Power (kW) Fig. 1 – Peak Pulse Power Rating Curve 0.1 100 0.1µs 1.0 µs1 0 µs td — Pulse Width (sec.) 100µs 1.0ms 10ms Copper Pad Areas TJ = 25°C f = 1.0MHz Vsig = 50mVp-p Measured at Zero Bias VR , Measured at Stand-Off Voltage, VWM Fig. 6 - Maximum Non-Repetitive Forward Surge Current Uni-Directional Use Only 1 10 100 100 200 Peak Forward Surge Current, Amperes Number of Cycles at 60Hz 8.3ms Single Half Sine-Wave (JEDEC Method) T J = TJ max. Uni-Directional Bi-Directional tp — Pulse Duration (sec) Transient Thermal Impedance (°C/W) Fig. 5 – Typical Transient Thermal Impedance 0.1 1.0 100 0.001 0.01 0.1 1 10 100 1000 100 150 IPPM — Peak Pulse Current, % IRSM Fig. 3 – Pulse Waveform TJ = 25°C Pulse Width (td) is defined as the point where the peak current decays to 50% of I PPM tr = 10µsec. Peak Value IPPM Half Value — IPP IPPM 2 td 10/1000µsec. Waveform as defined by R.E.A. 0 1.0 2.0 3.0 4.0 t — Time (ms)