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www.anova-semi.com Revision: G Sep-01-2017 P. 1 Working Voltage: 5.0 to 440 V Peak Pulse Power: 1500 W Note: (3)VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V (1)Non-repetitive current pulse per Fig.5 and derated above TA= 25 °C per Fig.1 (2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum Operating junction and storage temperature range TJ, TSTG - 55 to +150 °C Typical thermal resistance, Junction to Ambient Rθ JA 75 °C/ WTypical thermal resistance, junction to lead Rθ JL Peak forward surge current, 8.3 ms single half sine- wave unidirectional only(2) IFSM 200 A Maximum instantaneous forward voltage at 100 A for unidirectional only (3) VF 3.5/5.0 V Peak pulse current with a 10/1000μs waveform(1) IPP See Next Table A Power dissipation on infinite heatsink at TL = 75 °C PD 6.5 W Parameter Symbol Value Unit Peak power dissipation with a 10/1000μs waveform(1) PPP 1500 W Maximum Ratings(TA=25℃ unless otherwise noted) Epoxy: UL 94V-0 rate flame retardant Lead: Solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end except Bipolar Mounting position: Any IEC-61000-4-2 ESD 15kV(Air), 8kV (Contact) Mechanical Data Case: Molded plastic RoHS compliant Surface Mount Transient Voltage Suppressors Features SMC/ DO-214AB Glass passivated chip
1500 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty cycle):0.01 % Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time
www.anova-semi.com Revision: G Sep-01-2017 P. 2 AMBIENT TEMPERATURE , (℃)AVERAGE FORWARD CURRENT, (A) 0 100 1 200 25 100 100 30 150 0 0 6.5 0.1 59 70 6.5 10000 0.74 ## 0 5 450 0 0 11000 200 0.2 100 5 450 0.5 76 7000 100 1 50 5 450 1.5 33 6000 17 2 23 5 450 3 13 5000 21 4 10 Fig. 3 - Steady State Power Derating Curve Fig. 4 - Peak Pulse Power Rating Curve Fig. 5 - Pulse Waveform Fig. 6 - Typical Junction Capacitance Ratings and Characteristics Curves (TA=25℃ unless otherwise noted) Fig. 1 - Pulse Derating Curve Fig. 2 - Maximum Non-Repetitive Surge Current 100 1000 10000 100000 1 10 100 1000 Junction Capacitance,CJ (pF) Reverse Breakdown Voltage,VBR (V) Uni-directional @VRWM Bi-directional @VRWM TJ=25 °C f=1.0MHz 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 25 50 75 100 125 150 175 200 Steady State Power Dissipation, (W) Lead Temperature , TL (℃) 120 160 200 1 10 100 Peak Forward Surge Current, (A) Number of Cycles at 60 Hz TJ = TJ max. 8.3 ms Single Half Sine-Wave 100 0 25 50 75 100 125 150 175 200 Peak Pulse Derating in Percentage of Peak Power or Current, (%) Ambient Temperature ,TA (℃) 100 0 1 2 3 4 Peak Pulse Current , (% ) Time , (ms) TJ = 25 °C Pulse Width (td) is defined as the point where the peak current decays to 50 % of Ipp 10/1000 μsec. Waveform as defined by R.E.A. Peak Value (Ipp) Half Value = Ipp td Tr=10μs Bi-directional @zero bias Uni-directional @zero bias 0.1 100 0.1 1 10 100 1000 10000 Pulse Width ,td (μs) Peak Power (kW)
www.anova-semi.com Revision: G Sep-01-2017 P. 3 Uni Bi Min (V) Max (V) IT (mA) Maximum Clamping Voltage VC @IPP (V) Electrical Characteristics(TA=25℃ unless otherwise noted) Part Number (Uni) Part Number (Bi) Device Marking Code Breakdown Voltage VBR @IT Maximum Reverse Leakage IR @VRWM (uA) Working Peak Reverse Voltage VRWM (V) Maximum Reverse Surge Current IPP (A)
www.anova-semi.com Revision: G Sep-01-2017 P. 4 Uni Bi Min (V) Max (V) IT (mA) Note: 1. Suffix 'A ' denotes 5% tolerance device. Without 'A' denotes 10% tolerance device 2. Add suffix 'C 'or ' CA ' after part number to specify Bi-directional devices 3. For Bi-Directional devices having VR of 10 volts and under, the IR limit is double Electrical Characteristics(TA=25℃ unless otherwise noted) Part Number (Uni) Part Number (Bi) Device Marking Code Breakdown Voltage VBR @IT Maximum Reverse Leakage IR @VRWM (uA) Working Peak Reverse Voltage VRWM (V) Maximum Reverse Surge Current IPP (A) Maximum Clamping Voltage VC @IPP (V)