SMC8205AS6-TRG VBSEMI | Alldatasheet

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  • Halogen-free Option Available  TrenchFET ® Power MOSFETs PRODUCT SUMMARY VDS (V) RDS(on) (Ω)I D (A) 0.024 at VGS = 4.5 V 6.0 0.028 at VGS = 2.5 V 5.0 Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. * Pb containing terminations are not RoHS compliant, exe mptions may apply. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless othe rwise noted Parameter Symbol 10 s Steady State Uni t Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C ID 6.0 5.2 A TA = 70 °C 4.8 4.2 Pulsed Drain Current IDM 30 Continuous Source Current (Diode Conduction)a IS 1.5 1.0 Maximum Power Dissipationa TA = 25 °C PD 1.5 1.0 WTA = 70 °C 0.96 0.64 Operating Junction and Storage T emperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 72 83 °C/WSteady State 100 120 Maximum Junction-to-Foot (Drain) Steady State RthJF 55 70 Available Pb-free RoHS* COMPLIANT D D D1/D2 TSOP6 Top View D1/D2 G11 SMC8205AS6-TRG www.VBsemi.com  100 % R g Tested  Compliant to RoHS Directive 2002/95/EC g A ll data sheet.com

Notes: a. For design aid only; not subj ect to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Abs olute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, u nless otherwise noted SPECIFICATIONS TJ = 25 °C, unless oth erwise noted Parameter Symbol Test Con ditions Min. Typ. a Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.5 1.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V ± 200 n A Z ero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µAVDS = 20 V, VGS = 0 V, TJ = 70 °C 25 On-State Drain Currentb ID(on) VDS ≤ 5 V, VGS = 4.5 V 30 A Drain-Source On-State Resistanceb RDS(on) VGS = 4.5 V, ID = 5.5 A 0.024 ΩVGS = 2.5 V, ID = 3.5 A 0.028 Forward Transconductanceb gfs VDS = 10 V, ID = 5.5 A 30 S Diode Forward Voltageb VSD IS = 1.5 A, VGS = 0 V 0.71 1.2 V Dynamica Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 5.5 A 12 18 nCGate-Source Charge Qgs 2.2 Gate-Drain Charge Qgd 3.6 Tur n-On Del ay Time td(on) VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω 245 365 ns Rise Time tr 330 495 Turn-Off Delay Time td(off) 860 1300 Fall Time tf 510 765 Gate-Current vs. Gate-Source Voltage 0 3 6 9 12 15 18 - Gate Current (mA)IGSS VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage 0369 1 2 15 0.01 100 10000 T J = 25 °C - Gate Current (A) I GSS 0.1 1000 V GS - Gate-to-Source Voltage (V) T J = 150 °C www.VBsemi.com SMC8205AS6-TRG g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless oth erwise noted Output Characteristics On-Resistance vs. Drain Current On-Resistance v s. Junction Temperature 0.5 1.0 1.5 2.0 4.5 6.0 012345 VGS = 5 thru 3 V 2 V 2.5 V VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 VGS = 4.5 V VGS = 2.5 V - On-Resistance (Ω)RDS(on) ID - Drain Current (A) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 2 5 5 0 7 5 100 125 150 V GS = 4.5 V I D = 5.5 A TJ - Junction Temperature (°C) (Normalized) - On-ResistanceRDS(on) Transfer Characteristics Gate Charge Source-Drain Diode Forward Voltage 0.5 1.0 1.5 2.0 2.5 6.0 T C = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID 25 °C 0 3 6 9 12 15 V DS = 10 V I D = 5.5 A - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS 1.2 1.5 0.1 0 0.3 0.6 0.9 T J = 25 °C T J = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A) IS www.VBsemi.com SMC8205AS6-TRG 1 V g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherw ise noted On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.01 0.02 0.03 0.04 0.05 0 123456 ID = 5.5 A - On-Resistance (Ω)R DS(on) VGS - Gate-to-Source Voltage (V) 0.001 160 200 100.1 Power (W) Time (s) 120 0.01 Threshold Volt age Safe Operating Area, Junction-to-Case - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 2 5 5 0 7 5 100 125 150 I D = 250 µA Variance (V)VGS(th) TJ - Temperature (°C) 0.1 1 10 100 0.01 5 1 ms - Drain Current (A)ID 0.1 Limited by RDS(on)* T C = 25 °C Single Pulse 10 ms 100 ms DC 10 s 1 s VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified Normalized Thermal Transient Impedan ce, Junction-to-Ambient 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 100 600 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 1. Duty Cycle, D = 2. Per Unit Base = R th J A = 11 5 °C/W 3. T JM - T A = P DM Z th J A (t ) t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM Square Wave Pulse Duration (s) Normalized Ef fective T ransient Thermal Impedance www.VBsemi.com SMC8205AS6-TRG g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless o therwise noted Normalized Thermal Transient Im pedance, Junction-to-Foot 10-3 10-2 11 010-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance www.VBsemi.com SMC8205AS6-TRG g A ll data sheet.com

L 5 4 R R C 0.15 M B A b C 0.08

0.17 Ref

-C- Seating Plane A 1 A 2 A -A- D -B- E 1 E L 2 (L 1 ) c 4x 1 4x 1 e 2 3 6 5 4 C 0.15 M B A b -B- E 1 E e 5-LEAD TSOP 6-LEAD TSOP TSOP: 5/6−LEAD JEDEC Part Number: MO-193C MILLIMETERS INCHES Dim Min Nom Max Min Nom Max A 0.91 - 1.10 0.036 - 0.043 A 1 0.01 - 0.10 0.0004 - 0.004 e 0.95 BSC 0.0374 BSC L 0.32 - 0.50 0.012 - 0.020 L 1 0.60 Ref 0.024 Ref L 2 0.25 BSC 0.010 BSC 0 4 8 0 4 8 1 7 Nom 7 Nom ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 www.VBsemi.com SMC8205AS6-TRG g A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR TSOP-6 0.119 (3.023) Recommended Minimum Pads Dimensions in Inches/(mm) 0.099 (2.510) 0.064 (1.626) 0.028 (0.699) 0.039 (1.001) 0.020 (0.508) 0.019 (0.493) www.VBsemi.com SMC8205AS6-TRG g A ll data sheet.com

e to improve reliability, function or design or for other reasons, product specifications and data are subjec t to change without notice. Taiwan VBsemi Ele ctronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representativ es (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete da ta contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi ma kes no guarantee, representation or warranty on the product for any particular purpose of any goods or co ntinuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished : (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a pa rticular purpose, non-infringement and merchantability guarantee. Statement on c ertain types of applications are based on knowledge of the product is often used in a typical application o f the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suit able for a particular application is non-binding. It is the customer's responsibility to verify specific product feature s in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance ove r time. All operating parameters, including typical parameters must be made by customer's technical exp erts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasi ng terms and conditions, including but not limited to warranty herein. Unless express ly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustai ning applications or any other application. Wherein VBsemi product failure could lead to personal injury or death , use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Conta ct your authorized Taiwan VBsemi people who are related to product design applications and other terms an d conditions in writing. The informatio n provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trade marks referred to herein are trademarks of their respective representatives will be all. MaterialCatego ryPolicy Taiwan VBsemi El ectronics Co., Ltd., hereby certify that all of the products are determined to be RoHS complian t and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 20 11 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronicequ ipment(EEE)-modification,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) Pleasenotethat somedocumentsmaystillrefertoTaiwanVBsemiRoHSDirective2002/95/EC.We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65/. Taiwan VBsemi El ectronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free ha logen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi docume nts still refer to the definition of IEC 61249-2-21, and we are sure that all products conformtoconfir mcompliancewithIEC61249-2-21standardlevelJS709A. www.VBsemi.com SMC8205AS6-TRG A ll data sheet.com