SM8G45 TOSHIBA | Alldatasheet

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SM8G45, SM8J45, SM8G45A, SM8J45A 2004-07-06 1 TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8G45, SM8J45, SM8G45A, SM8J45A AC POWER CONTROL APPLICATIONS z Repetitive Peak Off−State Voltage: VDRM = 400V, 600V z R.M.S On−State Current: IT (RMS) = 8A z High Commutating (dv / dt) MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT SM8G45 SM8G45A 400 Repetitive Peak Off− State Voltage SM8J45 SM8J45A VDRM 600 V R.M.S On−State Current (Full Sine Waveform Tc = 105°C) IT (RMS) 8 A 80 (50Hz) Peak One Cycle Surge On−State Current (Non−Repetitive) ITSM 88 (60Hz) A I2t Limit Value I 2t 32 A 2s Critical Rate of Rise of On−State Current di / dt 50 A / µs Peak Gate Power Dissipation P GM 5 W Average Gate Power Dissipation P G (AV) 0.5 W Peak Gate Voltage V GM 10 V Peak Gate Current I GM 2 A Junction Temperature T j −40~125 °C Storage Temperature Range T stg −40~125 °C Unit: mm JEDEC TO-220AB JEITA ― TOSHIBA 13-10G1A Weight: 2.0 g (typ.)

SM8G45, SM8J45, SM8G45A, SM8J45A 2004-07-06 2 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Repetitive Peak Off−State Current IDRM VDRM = Rated, Tj = 125°C ― ― 2 mA I T2 (+), Gate (+) ― ― 2 II T2 (+), Gate ( −) ― ― 2 III T2 ( −), Gate (−) ― ― 2 SM8G45 SM8J45 IV T2 ( −), Gate (+) ― ― ― II T2 (+), Gate ( −) ― ― 1.5 III T2 ( −), Gate (−) ― ― 1.5 Gate Trigger Voltage SM8G45A SM8J45A IV VGT VD = 12V RL = 20Ω V II T2 (+), Gate ( −) ― ― 30 III T2 ( −), Gate (−) ― ― 30 SM8G45 SM8J45 IV T2 ( −), Gate (+) ― ― ― II T2 (+), Gate ( −) ― ― 20 III T2 ( −), Gate (−) ― ― 20 Gate Trigger Current SM8G45A SM8J45A IV IGT VD = 12V RL = 20Ω mA Peak On−State Voltage V TM I TM = 12A ― ― 1.5 V Gate Non−Trigger Voltage V GD V D = Rated, Tc = 125°C 0.2 ― ― V Holding Current I H V D = 12V, ITM = 1A ― ― 50 mA Thermal Resistance R th (j−c) Junction to Case, AC ― ― 2.0 °C / W SM8G45 SM8J45 10 ― ― Critical Rate of Rise of Off− State Voltage at Commutation SM8G45A SM8J45A (dv / dt) c VDRM = 400V, (di / dt) c = −4.5A / ms Tj = 125°C 4 ― ― V / µs MARKING Part No. (or abbreviation code) Part No. M8G45 SM8G45, SM8G45A M8J45 SM8J45, SM8J45A Nothing SM8G45, SM8J45 M8J45A SM8G45A, SM8J45A Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. M8G45 Characteristics indicator*2 Part No. (or abbreviation code) *1

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  • The information contained herein is subject to change without notice.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
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  • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunctio n or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
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