SM712

SM712 SMCDIODE | Alldatasheet

Document overview

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Technical content

DataSheetN2270,REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SM712 SM712TVSDiode

Description

SchematicandPinConfiguration MechanicalCharacteristics

Applications

 Transientprotectionforhighspeeddata lines IEC61000-4-2(ESD)±15KV(air),±8KV(contact) IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning) 12A(8/20us)  Protects two +12Vto-7V lines  Lowcapacitance  Lowclamping voltage  Solid-statesilicon avalanche technology  “-A”isan AEC-Q101qualifieddevice SOT-23 TheSM712transientvoltagesuppressor (TVS) diodeis designedforasymmetrical(12Vto-7V)protection in multi-pointdatatransmissionstandardRS-485applications. TheSM712maybeusedtoprotectdevices fromtransientvoltagesresultingfromelectrostatic discharge(ESD),electrical fasttransients(EFT),and lightning. TheSM712replacesfour discretecomponentsby integratingtwo12Vand two7V TVSdiodes inasingle package.Theintegrateddesignaidsin reducing voltageover-shootassociatedwithtraceinductance. ThelowclampingvoltageoftheSM712minimizes the stressontheprotectedtransceiver.TheSOT23 packageallows flexibilityinthedesignof“crowded” circuitboards.  ProtectionofRS-485transceivers with extended  common-moderange  Securitysystems  AutomaticTellerMachines  HFCsystems  SOT-23package  Marking:712  Moldingcompound flammabilityrating:UL94V-0

DataSheetN2270,REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SM712 * Pulsewidth<300µs, dutycycle<2% Forinformationontapeandreelspecifications,includingpart orientationandtapesizes,pleaserefertoourtapeandreel packagingspecification. MaximumRatings: Characteristics Symbol Max. Units PeakPulseCurrent(tp=8/20us) IPP 15 A LeadSolderingTemperature TL 260(10seconds) ℃ OperatingTemperature TJ -55to+125 ℃ StorageTemperature TSTG -55to+150 ℃ ElectricalCharacteristics@TA=25°Cunlessotherwisespecified Pins1to3and2to 3(12VTVS) Pins3to1and3to 2(7VTVS) ReverseStand-OffVoltage* VRWM - - - 12 - - 7 V ReverseBreakdown Voltage* VBR IPT=1mA 13.3 - - 7.5 - - V ReverseLeakageCurrent* IR VR=VRWM - - 1 - - 20 uA ClampingVoltage VC IPP=5A,tp=8/20us - - 20 - - 12 V ClampingVoltage VC IPP=15A,tp=8/20us - - 26 - - 14 V JunctionCapacitance Cj VR=0V,f=1MHz - 75 - - 75 pF OrderingInformation MarkingDiagram Device Package Shipping SM712 SOT-23 (Pb-Free) 3000pcs/reel SM712TR SOT-23 (Pb-Free) 3000pcs/reel 712 =DeviceCode

DataSheetN2270,REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SM712 MechanicalDimensions SOT-23 SYMBOL Millimeters Inches MIN. MAX. MIN. MAX. A 0.890 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.076 0.170 0.003 0.007 D 2.650 3.050 0.104 0.120 E 1.190 1.400 0.047 0.055 E1 2.100 2.550 0.083 0.100 e 0.950TYP. 0.037TYP. e1 1.780 2.050 0.070 0.081 L 0.550REF. 0.022REF. L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° CarrierTapeSpecificationSOT-23 SYMBOL Millimeters Min. Max. A 3.05 3.25 B 2.67 2.87 C 1.12 1.32 d 1.40 1.60 E 1.65 1.85 F 3.40 3.60 P 3.90 4.10 P0 3.90 4.10 P1 1.90 2.10 W 7.90 8.30

DataSheetN2270,REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SM712 DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations.