SM712 SAMYANG | Alldatasheet

Document overview

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Technical content

Features

■Maximum Ratings (Ta=25℃ Unless otherwise specified） ■Electrical Characteristics（Ta=25℃ Unless otherwise specified） SM712 www.diode.co.kr

  • 400 watts peak pulse power (t p = 8/20µs)
  • Transient protection for asymmetrical data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 12A (8/20µs)
  • Protects two +12V to -7V lines
  • Low capacitance
  • Low clamping voltage
  • Solid-state silicon avalanche technology
  • Protection of RS- 485 transceivers with ex tended common-mode range
  • Security sys tems
  • Automatic Teller Machines
  • HFC sy stems
  • Networks SOT-23 Rating Symbol Value Units Peak Pulse Power (tp = 8/20μs) Ppk 400 Watts Peak Pulse Current (tp = 8/20μs) IPP 17 A ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) VESD 15 8 kV Lead Soldering Temperature TL 260 (10 sec.) ℃ Operating Temperature TJ -55 to +125 ℃ Storage Temperature TSTG -55 to +150 ℃ d n a 3 o t 1 s n i P 3 o t 2 ) S V T V 2 1 ( d n a 1 o t 3 s n i P 2 o t 3 ) S V T V 7 ( r e t e m a r a lP o b m y sS n o i t i d n o CN I M P Y T X A M N I M P Y T X A M s t i n U e g a t l o V f f O - d n a t S e s r e v eVR M W R 1 o t 2 n i P r o 1 o t 3 n i2P 1 7 V e g a t l o V n w o d k a e r B e s r e v eVR R B I T P A m 1 = 3 . 3 51 . V7 t n e r r u C e g a k a e L e s r e v eIR R V = RV M W R 1 0 2 µA e g a t l o V g n i p m a lVC C I P P , A 5 = s µ 0 2 / 8 = p t 0 2 0 1 V e g a t l o V g n i p m a lVC C I P P , A 7 1 = s µ 0 2 / 8 = p t 6 2 2 1 V e c n a t i c a p a C n o i t c n uCJ j VR z H M 1 = f , V 0 5= 7 5 7 F p VR V =M W R z H M 1 = f 5, 4 5 4 F p SAM YANG SAMYANG ELECTRONICS All d ata sheet.com

■ Characteristics (Typical) www.diode.co.kr SM712 td 600W, 8/20µs Waveform 0.1 1 10 100 1,000 10,000 PPP 100 1,000 10,000 Peak Pulse Power VS Pulse Time Power Derating Curve 100 110 0 5 10 15 20 25 30 Tim e (µs) Percent of I PP e-t td = I PP /2 W aveform Parameters: tr = 8µs td = 20µs Capacitance vs. Reverse Voltage 100 110 0 25 50 75 100 125 150 175 Ambient Temperature - TA (oC) % of Rated Power or I PP 0 2 4 6 8 10 12 14 16 Peak Pulse Current - IPP (A) Clamping Voltage - V C (V) Pin 1 to 3 and 2 to 3 Pin 3 to 1 and 3 to Waveform Parameters: tr = 8µs td = 20µs 0123 4 5 6 7 8 9 10 11 12 13 Reverse Voltage - VR (V) Capacitance - Cj (pF) f = 1MHz Pulse Waveform Clamping Voltage vs. Peak Pulse Current SAM YANG SAMYANG ELECTRONICS All d ata sheet.com

■ Outline Dimensions www.diode.co.kr SAM YANG SAMYANG ELECTRONICS SM712 e E θ L SOT-23 Dimensions In Millimeters Symbol Min Typ Max A 1.00 1.40 A1 0.10 b 0.35 0.50 c 0.10 0.20 D 2.70 2.90 3.10 E 1.40 1.60 E1 2.40 2.80 e 1.90 L 0.10 0.30 L1 0.40 θ 0° 10° All d ata sheet.com