SM712-HF COMCHIP | Alldatasheet
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Technical content
Features
- Low clamping voltage. Mechanical data - Mounting position: Any. - Case: SOT-23, molded plastic. - Low leakage - Operating voltage: 7V or 12V . Symbol ValueParameter Unit Peak pulse power (Note 2) Peak pulse current (Note 2) IPP W IEC 61000-4-2(ESD)contact (Note 1) IEC 61000-4-2(ESD)air (Note 1) ±30 kV ESD ESD kV±30 PPP A 351 Maximum Rating (at TA=25°C unless otherwise noted) Notes : 1. Device stressed with ten non-repetitive ESD pulses. 2. Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC 61000-4-5. Storage temperature range -55 ~ +125 ℃ TSTG TJ ℃-55 ~ +150 Operating temperature range Circuit Diagram 1 2
Electrical Characteristics (at TA=25°C unless otherwise noted) Comchip Technology CO., LTD. Page 2 SMD ESD Protection Diode QW-JP119 Symbol TypParameter Min Max Unit Reverse leakage current Conditions VRWM VPin1 to Pin3 and Pin2 to Pin3 VRWM V IR µAPin1 to Pin3 and Pin2 to Pin3 0.5 7Pin3 to Pin1 and Pin3 to Pin2 Breakdown voltage VBR V13.3 7.5 V VC VBR V20 IR µAPin3 to Pin1 and Pin3 to Pin2 0.5 VC V VC V VC V VR = VRWM, f =1MHz Junction capacitance CJ pF Junction capacitance pF CJ CJ pF30 CJ pF Pin3 to Pin1 and Pin3 to Pin2 Pin3 to Pin1 and Pin3 to Pin2 Pin3 to Pin1 and Pin3 to Pin2 Pin3 to Pin1 and Pin3 to Pin2 Pin3 to Pin1 and Pin3 to Pin2 Pin1 to Pin3 and Pin2 to Pin3 Pin1 to Pin3 and Pin2 to Pin3 Pin1 to Pin3 and Pin2 to Pin3 Pin1 to Pin3 and Pin2 to Pin3 Pin1 to Pin3 and Pin2 to Pin3 VR = VRWM VR = VRWM IT = 1mA IT = 1mA IPP = 5A IPP = 5A IPP = 13A IPP = 13A VR = VRWM, f =1MHz VR = 0V, f =1MHz VR = 0V, f = 1MHz Notes : 1. Other voltage available upon request. 2. Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC 61000-4-5. Clamping voltage (Note 2) Clamping voltage (Note 2) Reverse standoff voltage (Note 1) REV:B
Typical Rating and Characteristic Curves (SM712-HF) Comchip Technology CO., LTD. Page 3 SMD ESD Protection Diode QW-JP119 Reverse Voltage Fig.1 - Junction Capacitance vs. 108642 Junction Capacitance, CJ (pF) Peak Power, PPP (kW) 0.1 1 10 100 100 0.01 0.1 141210842 % of Rated Power Fig.4 - Power Derating Curve Ambient Temperature, TA (℃) 0 25 50 100 150 100 120 125 Peak Pulse Current, IPP (A) 8060 Time, t (µs) 40200 100 % of Peak Pulse Current Voltage, (V) Time, (ns) -100 -50 150 200 250 300 0 20 40 60 80-20 Fig.6 - ESD Clamping Voltage 100 8kV Contact per IEC 61000-4-2 Reverse Voltage, VR (V) Pulse Duration, tp (µs) Fig.3 - Clamping Voltage vs. Peak Pulse Current Fig.2 - Peak Pulse Power vs. Pulse Time Fig.5 - 8 x 20µs Pulse Waveform Waveform parameter td=8µs tr=8µs Clamping Voltage, VC (V) Pin3 to Pin1 or Pin2 Pin1 or Pin2 to Pin3 Pin3 to Pin1 or Pin2 Pin1 or Pin2 to Pin3 REV:B
Comchip Technology CO., LTD. Page 4 Reel Taping Specification D1 D2 D A B C d E F P W (mm) (inch) SOT-23 SYMBOL (inch) SOT-23 SYMBOL A (mm) B C d D D1 D2 E F P P0 P1 W W1 − 0.004 0.484 ± 0.039 120° T T 0.20 ± 0.02 0.008 ± 0.001 SMD ESD Protection Diode QW-JP119 REV:B
Comchip Technology CO., LTD. Page 5 Marking Code Standard Packaging Case Type SOT-23 REEL (pcs) Reel Size (inch) 73,000 REEL PACK B712 Part Number Marking Code SM712-HF B712 SMD ESD Protection Diode QW-JP119 Suggested P.C.B. PAD Layout SIZE (inch) 0.055 (mm) 1.40 1.00 0.95 0.039 0.037 SOT-23 2.20 0.087 A B C D 3.60 0.142E A B D E C REV:B